Effect Transistor. ADM20N06D Datasheet

ADM20N06D Transistor. Datasheet pdf. Equivalent

Part ADM20N06D
Description N-Channel Enhancement Mode Field Effect Transistor
Feature                         ADV     ADM20N06D  N-Channel Enhancement Mode Field Effect Transistor PRO.
Manufacture ADV
Datasheet
Download ADM20N06D Datasheet

                        ADV     ADM20N06D  N-Channel Enhan ADM20N06D Datasheet
Recommendation Recommendation Datasheet ADM20N06D Datasheet





ADM20N06D
                       
ADV  
 
ADM20N06D 
N-Channel Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
VDSS
60V
ID
22A
RDS(ON) (mΩ)
55mΩ
TO251
2
1 23
Absolute Maximum Ratings ( TA = 25°C unless otherwise specified )
Symbol
Parameter
Common Ratings
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG
Storage Temperature Range
IS Diode Continuous Forward Current
TC=25°C
Mounted on Large Heat Sink
IDM 300μs Pulse Drain Current Tested
ID Continuous Drain Current
PD Maximum Power Dissipation
1. Pulse width limited by maximum junction temperature.
TC=25°C
TC=25°C
TC=70°C
TC=25°C
TC=70°C
Thermal Characteristics
Symbol
Parameter
RthJC
RthJA
Thermal resistance junction-case max
Thermal resistance junction-ambient max
Ratings
60
±20
150
-55 to 150
22
80
22
18
50
32
Ratings
2.5
100
Unit
V
°C
°C
A
A
A
A
W
W
Unit
°C/W
°C/W
 
1/6
www.advsemi.com
Ver.0.15



ADM20N06D
                       
ADV  
 
ADM20N06D 
Electrical Characteristics (TA=25°C Unless Otherwise Noted)
Symbol
Parameter
Test conditions
On/off Characteristics
BVDSS
Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
VGS(th)
IGSS
RDS(ON)
gFS
Gate Threshold Voltage
Gate Leakage Current
Drain-SourceOn-stateResistance
Forward transconductance
VGS=0V, IDS=250uA
VDS= 48V, VGS=0V
VDS=40V, VGS=0V TJ=55°C
VDS=VGS, IDS=250uA
VGS=±20V, VDS=0V
VGS= 10V, IDS=10A
VDS= 10V, IDS=10A
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
VGS=0V,
VDS= 25V,
Frequency=1.0MHz
Switching Characteristics
td(ON)
Turn-on Delay Time
tr Turn-on Rise Time
td(OFF)
Turn-off Delay Time
tf Turn-off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDD=30V,
ID= 1A, VGS= 10V,
RGEN=6Ω 
VDS=0.5V, VGS= 10V,
IDS=10A
Diode Characteristics
VSD Diode Forward Voltage
trr Reverse Recovery Time
qrr Reverse Recovery Charge
NOTES:
ISD = 1A, VGS = 0
ISD=22A, dlSD/dt=100A/s
1. Independent of operating temperature.
2. Pulse Test : Pulse width 300μs, Duty cycle 2%
Min.
60
--
--
1
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
Typ. Max. Unit
-- -- V
-- 1
uA
-- 10
1.5 2.5 V
-- ±250 nA
42 55 m
14 -- S
587 --
80 -- pF
46 --
11 --
8 --
ns
19 --
6 --
12.5 --
1.8 -- nC
3.7 --
-- 1 V
65 -- ns
150 -- nC
 
2/6
www.advsemi.com
Ver.0.15





@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)