ADV
ADM20N06D
N-Channel Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
VDSS 6...
ADV
ADM20N06D
N-Channel Enhancement Mode Field Effect
Transistor
PRODUCT SUMMARY
VDSS 60V
ID 22A
RDS(ON) (mΩ) 55mΩ
TO251 2
1 23
Absolute Maximum Ratings ( TA = 25°C unless otherwise specified )
Symbol
Parameter
Common Ratings
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG
Storage Temperature Range
IS Diode Continuous Forward Current
TC=25°C
Mounted on Large Heat Sink IDM 300μs Pulse Drain Current Tested⑴ ID Continuous Drain Current
PD Maximum Power Dissipation 1. Pulse width limited by maximum junction temperature.
TC=25°C TC=25°C TC=70°C TC=25°C TC=70°C
Thermal Characteristics
Symbol
Parameter
RthJC RthJA
Thermal resistance junction-case max Thermal resistance junction-ambient max
Ratings
60 ±20 150 -55 to 150
22
80 22 18 50 32
Ratings 2.5 100
Unit
V °C °C A
A A A W W
Unit °C/W °C/W
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