Effect Transistor. ADM8P03S Datasheet

ADM8P03S Transistor. Datasheet pdf. Equivalent

Part ADM8P03S
Description P-Channel Enhancement Mode Field Effect Transistor
Feature                         ADV     ADM8P03S  P-Channel Logic Level Enhancement Mode Field Effect Tran.
Manufacture ADV
Datasheet
Download ADM8P03S Datasheet

                        ADV     ADM8P03S  P-Channel Logic ADM8P03S Datasheet
Recommendation Recommendation Datasheet ADM8P03S Datasheet





ADM8P03S
                       
ADV  
 
ADM8P03S 
P-Channel Logic Level Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
VDSS
-30V
ID
-9.1A
RDS(ON) (mΩ)
20mΩ
SOP-8
SD
SD
SD
GD
Absolute Maximum Ratings ( TA = 25°C unless otherwise specified )
Symbol
Parameter
Common Ratings
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG
Storage Temperature Range
IS Diode Continuous Forward Current
TC=25°C
Mounted on Large Heat Sink
IDM 300μs Pulse Drain Current Tested
ID Continuous Drain Current
PD Maximum Power Dissipation
TC=25°C
TC=25°C
TC=75°C
TC=25°C
TC=75°C
Thermal Characteristics
Symbol
Parameter
RthJC Thermal resistance junction-case max
RthJA Thermal resistance junction-ambient max(PCB mounted )
1. Pulse width limited by maximum junction temperature.
2. 1-in2 2oz Cu PCB board
Ratings
-30
±20
150
-55 to 150
-2.1
-50
-9.1
-4.5
2.5
1.6
Ratings
3
62.5
Unit
V
°C
°C
A
A
A
A
W
W
Unit
°C/W
°C/W
 
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ADM8P03S
                       
ADV  
 
Electrical Characteristics (TA=25°C Unless Otherwise Noted)
Symbol
Parameter
Test conditions
On/off Characteristics
BVDSS
Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
VGS(th)
IGSS
Gate Threshold Voltage
Gate Leakage Current
RDS(ON)
Drain-SourceOn-stateResistance
VGS=0V, IDS=-250uA
VDS= -30V, VGS=0V
VDS=-30V,VGS=0V TJ=125°C
VDS=VGS, IDS=-250uA
VGS=±20V, VDS=0V
VGS= -10V, IDS=-9.1A
VGS= -4.5V, IDS=-6.9A
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
VGS=0V,
VDS= -8V,
Frequency=1.0MHz
Switching Characteristics
td(ON)
Turn-on Delay Time
tr Turn-on Rise Time
td(OFF)
Turn-off Delay Time
tf Turn-off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS =-15V,
ID= -1A, VGS= -10V,
RGEN=6Ω 
VDS=15V, VGS= -10V,
IDS=-9.1A
Diode Characteristics
VSD Diode Forward Voltage
NOTES:
1. Independent of operating temperature.
ISD = -2.1A, VGS = 0
2. Pulse Test : Pulse width 300μs, Duty cycle 2%
ADM8P03S 
Min. Typ. Max. Unit
-30 --
-- V
-- -- 1
uA
-- -- 10
-1 -1.3 -3
V
-- -- ±100 nA
-- 15 20
-- 20 35 m
-- 1837.3 --
-- 225.93 --
-- 151.23 --
pF
-- 15.44 --
-- 5.04 --
-- 71.04 --
-- 16.8 --
-- 33.82 --
-- 4.93 --
-- 5.2 --
ns
nC
-- -- -1.2 V
 
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