Effect Transistor. ADM3N06B Datasheet

ADM3N06B Transistor. Datasheet pdf. Equivalent

Part ADM3N06B
Description N-Channel Enhancement Mode Field Effect Transistor
Feature                         ADV     ADM3N06B   N-Channel Enhancement Mode Field Effect Transistor PRO.
Manufacture ADV
Datasheet
Download ADM3N06B Datasheet

                        ADV     ADM3N06B   N-Channel Enhan ADM3N06B Datasheet
Recommendation Recommendation Datasheet ADM3N06B Datasheet





ADM3N06B
                       
ADV  
 
ADM3N06B  
N-Channel Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
VDSS
60V
ID
3.0A
RDS(ON) (mΩ)
105mΩ
SOT-23
Absolute Maximum Ratings ( TA = 25°C unless otherwise specified )
Symbol
Parameter
Common Ratings
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG
Storage Temperature Range
IS Diode Continuous Forward Current(3)
TC=25°C
Mounted on Large Heat Sink
IDM 300μs Pulse Drain Current Tested
ID Continuous Drain Current
TC=25°C
TC=25°C
PD Maximum Power Dissipation3
1. Pulse width limited by maximum junction temperature.
Thermal Characteristics
Symbol
Parameter
RthJA Thermal resistance junction-ambient max(3)
Ratings
60
±20
150
-55 to 150
3
10
3
1.7
Ratings
73.5
Unit
V
°C
°C
A
A
A
W
Unit
°C/W
 
1/6
www.advsemi.com
Ver.0.11



ADM3N06B
                       
ADV  
 
Electrical Characteristics (TA=25°C Unless Otherwise Noted)
Symbol
Parameter
Test conditions
On/off Characteristics
BVDSS
Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
VGS(th)
IGSS
RDS(ON)
Gate Threshold Voltage
Gate Leakage Current
Drain-SourceOn-stateResistance
VGS=0V, IDS=250uA
VDS= 60V, VGS=0V
VDS=60V, VGS=0V TJ=55°C
VDS=VGS, IDS=250uA
VGS=±20V, VDS=0V
VGS= 10V, IDS=3A
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
VGS=0V,
VDS= 3V,
Frequency=1.0MHz
Switching Characteristics
td(ON)
Turn-on Delay Time
tr Turn-on Rise Time
td(OFF)
Turn-off Delay Time
tf Turn-off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDD=30V,
ID= 1.5A, VGS= 10V,
RGEN=1Ω 
VDS=30V, VGS= 4.5V,
IDS=3A
Diode Characteristics
VSD Diode Forward Voltage
NOTES:
ISD = 3A, VGS = 0
1. Independent of operating temperature.
2. Pulse Test : Pulse width 300μs, Duty cycle 2%
3. Surface Mounted on FR4 Board, t < 10 sec.
ADM3N06B
Min. Typ. Max. Unit
60 65 -- V
-- -- 1
uA
-- -- 10
0.8 1.1 1.4 V
-- -- ±100 nA
-- 78 105 m
-- 247 --
-- 34 -- pF
-- 19.5 --
-- 6 --
-- 15 --
ns
-- 15 --
-- 10 --
-- 6 --
-- 1 -- nC
-- 1.3 --
-- -- 1.2 V
 
 
2/6
www.advsemi.com
Ver.0.11





@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)