Effect Transistor. ADM7ND02 Datasheet

ADM7ND02 Transistor. Datasheet pdf. Equivalent

Part ADM7ND02
Description Dual N-Channel Enhancement Mode Field Effect Transistor
Feature                         ADV     ADM7ND02  Common-Drain Dual N-Channel Enhancement Mode Field Effec.
Manufacture ADV
Datasheet
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ADM7ND02
                       
ADV  
 
ADM7ND02 
Common-Drain Dual N-Channel Enhancement Mode Field Effect
Transistor
T S S O P-8
D1 1
S1 2
S1 3
G1 4
8 D2
7 S2
6 S2
5 G2
D1
G1
D2
G2
S1 S2
PRODUCT SUMMARY
VDSS
20V
ID
7A
RDS(ON) (mΩ)
21mΩ
Absolute Maximum Ratings ( TA = 25°C unless otherwise specifed )
Symbol
Parameter
Common Ratings
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG
Storage Temperature Range
IS Diode Continuous Forward Current(3)
TC=25°C
Mounted on Large Heat Sink
IDM 300μs Pulse Drain Current Tested
ID Continuous Drain Current
PD Maximum Power Dissipation
1. Pulse width limited by maximum junction temperature.
TC=25°C
TC=25°C
TC=70°C
TC=25°C
TC=70°C
Thermal Characteristics
Symbol
Parameter
RthJA Thermal resistance junction-ambient max(3)
 
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Ratings
20
±12
150
-55 to 150
2.4
25
7
5.5
1.5
0.96
Ratings
83
Unit
V
°C
°C
A
A
A
A
W
W
Unit
°C/W
Ver.0.11



ADM7ND02
                       
ADV  
 
Electrical Characteristics (TA=25°C Unless Otherwise Noted)
Symbol
Parameter
Test conditions
On/off Characteristics
BVDSS
Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
VGS(th)
IGSS
RDS(ON)
RDS(ON)
RDS(ON)
Gate Threshold Voltage
Gate Leakage Current
Drain-SourceOn-stateResistance
Drain-SourceOn-stateResistance
Drain-SourceOn-stateResistance
VGS=0V, IDS=250uA
VDS=20V, VGS=0V
VDS=20V, VGS=0V TJ=55°C
VDS=VGS, IDS=250uA
VGS=±10V, VDS=0V
VGS= 10V, IDS=7A
VGS= 4.5V, IDS=6.5A
VGS= 2.5V, IDS=5.5A
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
VGS=0V,
VDS= 8V,
Frequency=200KHz
Switching Characteristics
td(ON)
Turn-on Delay Time
tr Turn-on Rise Time
td(OFF)
Turn-off Delay Time
tf Turn-off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDD=15V,
ID= 1A, VGS= 4.5V,
RGEN=6Ω 
VDS=10V, VGS= 4.5V,
IDS=6.0A
Diode Characteristics
VSD Diode Forward Voltage
ISD = 1.7A, VGS = 0
NOTES:
1. Independent of operating temperature.
2. Pulse Test : Pulse width 300μs, Duty cycle 2%
3. Surface Mounted on FR4 Board, t < 10 sec.1-in2 2oz Cu PCB board.
ADM7ND02 
Min. Typ. Max. Unit
20 --
-- V
-- -- 1
uA
-- -- 5
0.6 0.8 1 V
--
-- ±10
uA
-- 16.5 21.0 m
-- 20.0 24.0 m
-- 26.0 32.0 m
-- 686.3 --
-- 97.2 --
-- 94 --
pF
-- 385.9 --
-- 899.9 --
-- 4575.0 --
-- 2554.0 --
-- 6.1 12
-- 2.0 --
-- 1.2 --
ns
nC
-- -- 1.2 V
 
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Ver.0.11





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