ADV
ADM4N06A
N-Channel Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
VDSS 60...
ADV
ADM4N06A
N-Channel Enhancement Mode Field Effect
Transistor
PRODUCT SUMMARY
VDSS 60V
ID 4.6A
RDS(ON) (mΩ) 90mΩ
SOT-89
2
1 2 3
Absolute Maximum Ratings ( TA = 25°C unless otherwise specifed )
Symbol
Parameter
Common Ratings
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG
Storage Temperature Range
IS Diode Continuous Forward Current（3）
TC=25°C
Mounted on Large Heat Sink IDM 300μs Pulse Drain Current Tested⑴ ID Continuous Drain Current
PD Maximum Power Dissipation 1. Pulse width limited by maximum junction temperature.
TC=25°C TC=25°C TC=70°C TC=25°C TC=70°C
Thermal Characteristics
Symbol
Parameter
RthJA Thermal resistance junction-ambient max（3）
Ratings
60 ±20 150 -55 to 150
3
18.4 4.6 4 3 2.5
Ratings 42
Unit
V °C °C A
A A A W W
Unit °C/W
1/6
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