ADV
ADM20NC60F
N-Channel Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
VDSS ...
ADV
ADM20NC60F
N-Channel Enhancement Mode Field Effect
Transistor
PRODUCT SUMMARY
VDSS 600V
ID 20A
RDS(ON) (mΩ) 170mΩ
TO220
Features:
● Low gate input resistance ● High dv/dt and avalanche capabilities ●100% avalanche tested
● Low input capacitance and gate charge
● Lead-Free,RoHS Compliant
1 2 3
Description:
The ADM20N60F series MOSFETs is a new technology, which combines an innovative super junction technology and advance process. This new technology achieves low Rdson, energy saving, high reliability and uniformity, superior power density and space saving.
Absolute Maximum Ratings ( TA = 25°C unless otherwise specifed )
Symbol
Parameter
Common Ratings
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG
Storage Temperature Range
IS Diode Continuous Forward Current
TC=25°C
Mounted on Large Heat Sink IDM 300μs Pulse Drain Current Tested⑴
ID Continuous...