Effect Transistor. ADM25P06E Datasheet

ADM25P06E Transistor. Datasheet pdf. Equivalent

Part ADM25P06E
Description P-Channel Enhancement Mode Field Effect Transistor
Feature                         ADV     ADM25P06E  P-Channel Logic Level Enhancement Mode Field Effect Tra.
Manufacture ADV
Datasheet
Download ADM25P06E Datasheet

                        ADV     ADM25P06E  P-Channel Logic ADM25P06E Datasheet
Recommendation Recommendation Datasheet ADM25P06E Datasheet





ADM25P06E
                       
ADV  
 
ADM25P06E 
P-Channel Logic Level Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
VDSS
-60V
ID
-26A
RDS(ON) (mΩ)
35mΩ
TO252
2
1 
2 
3
Absolute Maximum Ratings ( TA = 25°C unless otherwise specifed )
Symbol
Parameter
Common Ratings
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG
Storage Temperature Range
IS Diode Continuous Forward Current
TC=25°C
Mounted on Large Heat Sink
IDM 300μs Pulse Drain Current Tested
ID Continuous Drain Current
PD Maximum Power Dissipation
TC=25°C
TC=25°C
TC=100°C
TC=25°C
TC=100°C
Thermal Characteristics
Symbol
Parameter
RthJC Thermal resistance junction-case max
RthJA Thermal resistance junction-ambient max
1. Pulse width limited by maximum junction temperature.
Ratings
-60
±20
150
-55 to 150
-26
-100
-26
-16
42
17
Ratings
3
50
Unit
V
°C
°C
A
A
A
A
W
W
Unit
°C/W
°C/W
 
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ADM25P06E
                       
ADV  
 
ADM25P06E 
Electrical Characteristics (TA=25°C Unless Otherwise Noted)
Symbol
Parameter
Test conditions
On/off Characteristics
BVDSS
Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
VGS(th)
IGSS
Gate Threshold Voltage
Gate Leakage Current
RDS(ON)
Drain-SourceOn-stateResistance
gFS Forward transconductance
VGS=0V, IDS=-250uA
VDS= -48V, VGS=0V
VDS=-40V,VGS=0V TJ=125°C
VDS=VGS, IDS=-250uA
VGS=±20V, VDS=0V
VGS= -10V, IDS=-25A
VGS= -5V, IDS=-20A
VDS=- 10V, IDS=-25A
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
VGS=0V,
VDS= -30V,
Frequency=1.0MHz
Switching Characteristics
td(ON)
Turn-on Delay Time
tr Turn-on Rise Time
td(OFF)
Turn-off Delay Time
tf Turn-off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS =-30V,
ID= -20A, VGS= -10V,
RGEN=6Ω 
VDS=0.5V, VGS= -10V,
IDS=-25A
Diode Characteristics
VSD Diode Forward Voltage
trr Reverse Recovery Time
qrr Reverse Recovery Charge
NOTES:
1. Independent of operating temperature.
ISD = -25A, VGS = 0
ISD=-25A, dlSD/dt=100A/s
2. Pulse Test : Pulse width 300μs, Duty cycle 2%
Min.
-60
--
--
-2
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
Typ. Max. Unit
-- --
-- 1
-- 10
-2.7 -4
-- ±100
29 35
32 55
15 --
V
uA
V
nA
m
S
2550
--
241 -- pF
140 --
30 --
90 --
ns
70 --
15 --
39 --
13 -- nC
8 --
-- -1.3 V
30 -- ns
100 -- nC
 
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Ver.0.12





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