Effect Transistor. ADM105N03E Datasheet

ADM105N03E Transistor. Datasheet pdf. Equivalent

Part ADM105N03E
Description N-Channel Enhancement Mode Field Effect Transistor
Feature                         ADV     ADM105N03E  N-Channel Enhancement Mode Field Effect Transistor PR.
Manufacture ADV
Datasheet
Download ADM105N03E Datasheet

                        ADV     ADM105N03E  N-Channel Enha ADM105N03E Datasheet
Recommendation Recommendation Datasheet ADM105N03E Datasheet





ADM105N03E
                       
ADV  
 
ADM105N03E 
N-Channel Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
VDSS
30V
ID
105A
RDS(ON) (mΩ)
4.0mΩ
TO252
2
1 
2 
3
Absolute Maximum Ratings ( TA = 25°C unless otherwise specifed )
Symbol
Parameter
Common Ratings
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG
Storage Temperature Range
IS Diode Continuous Forward Current
TC=25°C
Mounted on Large Heat Sink
IDM 300μs Pulse Drain Current Tested
TC=25°C
ID Continuous Drain Current
TC=25°C
PD Maximum Power Dissipation
1. Pulse width limited by maximum junction temperature.
TC=25°C
Thermal Characteristics
Symbol
Parameter
RthJC
RthJA
Thermal resistance junction-case max
Thermal resistance junction-ambient max
Ratings
30
±20
150
-55 to 150
105
420
105
150
Ratings
1.0
62
Unit
V
°C
°C
A
A
A
W
Unit
°C/W
°C/W
 
1/6
www.advsemi.com
Ver.0.11



ADM105N03E
                       
ADV  
 
ADM105N03E 
Electrical Characteristics (TA=25°C Unless Otherwise Noted)
Symbol
Parameter
Test conditions
On/off Characteristics
BVDSS
Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
VGS(th)
IGSS
RDS(ON)
gFS
Gate Threshold Voltage
Gate Leakage Current
Drain-SourceOn-stateResistance
Forward transconductance
VGS=0V, IDS=250uA
VDS= 24V, VGS=0V
VDS=30V, VGS=0V TJ=55°C
VDS=VGS, IDS=250uA
VGS=±20V, VDS=0V
VGS= 10V, IDS=30A
VDS= 10V, IDS=30A
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
VGS=0V,
VDS= 15V,
Frequency=1.0MHz
Switching Characteristics
td(ON)
Turn-on Delay Time
tr Turn-on Rise Time
td(OFF)
Turn-off Delay Time
tf Turn-off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDD=20V,
ID= 10A, VGS= 10V,
RGEN=3Ω 
VDS=20V, VGS= 10V,
IDS=20A
Diode Characteristics
VSD Diode Forward Voltage
trr Reverse Recovery Time
qrr Reverse Recovery Charge
NOTES:
ISD = 1A, VGS = 0
ISD=20A, dlSD/dt=100A/s
1. Independent of operating temperature.
2. Pulse Test : Pulse width 300μs, Duty cycle 2%
Min.
30
--
--
1
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
Typ. Max. Unit
-- -- V
-- 1
uA
-- 5
1.4 2.5 V
-- ±100 nA
3.0 4.0 m
14 -- S
5500
--
760 -- pF
550 --
12.7 --
9.1 --
ns
49.0 --
16 --
84 --
12 -- nC
20 --
-- 1.2 V
42.0 -- ns
31.0 -- nC
 
2/6
www.advsemi.com
Ver.0.11





@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)