Effect Transistor. ADM200N06 Datasheet

ADM200N06 Transistor. Datasheet pdf. Equivalent

Part ADM200N06
Description N-Channel Enhancement Mode Field Effect Transistor
Feature                         ADV     ADM200N06  N-Channel Enhancement Mode Field Effect Transistor PRO.
Manufacture ADV
Datasheet
Download ADM200N06 Datasheet

                        ADV     ADM200N06  N-Channel Enhan ADM200N06 Datasheet
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ADM200N06
                       
ADV  
 
ADM200N06 
N-Channel Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
VDSS
60V
ID
198A
RDS(ON) (mΩ)
3.8mΩ
TO220C
Features:
Low gate input resistance
High dv/dt and avalanche capabilities
100% EAS Guaranteed
Advanced high cell density Trench technology
Lead-Free,RoHS Compliant
1 
2 
3 
Description:
The AM200N06 series MOSFETs is a new technology, which combines an innovative super junction technology
and advance process. This new technology achieves low Rdson, energy saving, high reliability and uniformity,
superior power density and space saving.
Absolute Maximum Ratings ( TA = 25°C unless otherwise specifed )
Symbol
Parameter
Common Ratings
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG
IS
Storage Temperature Range
Diode Continuous Forward Current1,6
TC =25°C
Mounted on Large Heat Sink
IDM 300μs Pulse Drain Current Tested2
ID Continuous Drain Current1,3
Maximum Power Dissipation4
PD Maximum Power Dissipation4
TC=25°C
TC=25°C
TC=100°C
TC=25°C
TA=25°C
Ratings
60
±20
150
-55 to 150
198
350
198
125
260
2.02
Unit
V
°C
°C
A
A
A
A
W
W
Thermal Characteristics
Symbol
RthJC
RthJA
Parameter
Thermal resistance junction-case max1
Thermal resistance junction-ambient max1
Ratings
0.48
62
Unit
°C/W
°C/W
 
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www.advsemi.com
Feb,2013 -Rev.3.02



ADM200N06
                       
ADV  
 
ADM200N06 
Electrical Characteristics (TA=25°C Unless Otherwise Noted)
Symbol
Parameter
Test conditions
On/off Characteristics
BVDSS
Drain-Source Breakdown Voltage VGS=0V, IDS=250uA
IDSS
Zero Gate Voltage Drain Current
VDS=48V,VGS=0V ,TJ=25°C
VDS=48V,VGS=0V ,TJ=55°C
VGS(th)
Gate Threshold Voltage
VDS=VGS, IDS=250A
IGSS
RDS(ON)
Gate Leakage Current
VGS=±20V, VDS=0V
Drain-SourceOn-stateResistance2VGS= 10V, IDS=30A
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
VGS=0V,
VDS= 15V,
Frequency=1MHz
Switching Characteristics
td(ON)
Turn-on Delay Time
tr Turn-on Rise Time
td(OFF)
Turn-off Delay Time
tf Turn-off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS=30V,
ID= 48A, VGS= 10V,
RGEN=3.3Ω
 
VDS=48V, VGS= 10V,
IDS=15A
Min.
60
--
--
2.5
--
--
--
--
--
--
--
--
--
--
--
--
Typ. Max. Unit
-- -- V
-- 1
uA
-- 5
4.5 V
-- ±100 nA
3 3.8 m
6655
--
1565 -- pF
340 --
33.6 --
40.6 --
ns
59 --
26.8 --
89 --
32 -- nC
18 --
EAS
Single Pulse Avalanche Energy5VDD=50V , L=0.1mH ,
IAS=30A
78
--
Diode Characteristics
VSD Diode Forward Voltage2
trr Reverse Recovery Time
qrr Reverse Recovery Charge
ISD = 30A, VGS = 0
ISD=30A, dlSD/dt=100A/s
--
--
--
--
46
52
NOTES:
1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width 300us , duty cycle 2%
3. Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 120A.
4.The power dissipation is limited by 150junction temperature
5.The Min. value is 100% EAS tested guarantee.
6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
--
1.2
--
--
mJ
V
ns
nC
 
2/6
www.advsemi.com
Feb,2013 -Rev.3.02





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