POWER THYRISTOR. YN0734YS120 Datasheet

YN0734YS120 Datasheet PDF, Equivalent


Part Number

YN0734YS120

Description

HIGH POWER THYRISTOR

Manufacture

YZPST

Total Page 3 Pages
PDF Download
Download YN0734YS120 Datasheet


YN0734YS120 Datasheet
YN0734YS120
Page1 of 3
1200 VDRM;
*********************************************************************************************************
HIGH POWER THYRISTOR FOR PHASE CONTROL APPLICATIONS
Features:
. All Diffused Structure
. Center Amplifying Gate Configuration
. Guaranteed Maximum Turn-Off Time
. High dV/dt Capability
. Pressure Assembled Device
ELECTRICAL CHARACTERISTICS AND RATINGS
Blocking - Off State
Device Type VRRM (1)
YN0734YS120 1200
VDRM (1)
1200
VRSM (1)
1300
VRRM = Repetitive peak reverse voltage
VDRM = Repetitive peak off state voltage
VRSM = Non repetitive peak reverse voltage (2)
Repetitive peak reverse
leakage and off state leakage
Critical rate of voltage rise (4)
IRRM / IDRM
dV/dt
15 mA
30 mA (3)
300 V/µsec
Conducting - on state
Parameter
Average value of on-state current
RMS value of on-state current
Peak one cPSTCle surge
(non repetitive) current
I square t
Latching current
Holding current
Peak on-state voltage
Critical rate of rise of on-state
current (5, 6)
Critical rate of rise of on-state
current (6)
Symbol
IT(AV)
ITRMS
Min.
ITSM
I2t
IL
IH
VTM
di/dt
Max. Typ.
734
1465
9240
8400
353000
800
400
1.78
400
di/dt 150
Notes:
All ratings are specified for Tj=25 oC unless
otherwise stated.
(1) All voltage ratings are specified for an applied
50Hz/60zHz sinusoidal waveform over the
temperature range -40 to +125 oC.
(2) 10 msec. max. pulse width
(3) Maximum value for Tj = 125 oC.
(4) Minimum value for linear and exponential
waveshape to 80% rated VDRM. Gate open.
Tj = 125 oC.
(5) Non-repetitive value.
(6) The value of di/dt is established in accordance
with EIA/NIMA Standard RS-397, Section
5-2-2-6. The value defined would be in addi-
tion to that obtained from a snubber circuit,
comprising a 0.2 µF capacitor and 20 ohms
resistance in parallel with the thristor under
test.
Units
A
A
A
A
A2s
mA
mA
V
A/µs
A/µs
Conditions
conduction,Tc =55oC
Nominal value
8.3 msec (60Hz), sinusoidal wave-
shape, 180o conduction, Tj = 125 oC
10.0 msec (50Hz), sinusoidal wave-
shape, 180o conduction, Tj = 125 oC
8.3 msec and 10.0 msec
VD = 24 V; RL= 12 ohms
VD = 24 V; I = 2.5 A
ITM = 1550 A;
Switching from VDRM 1000 V,
non-repetitive
Switching from VDRM 1000 V

YN0734YS120 Datasheet
ELECTRICAL CHARACTERISTICS AND RATINGS (contd)
Thyristor
Page 2 of 3
YN0734YS120 - Power
Gating
Parameter
Peak gate power dissipation
Average gate power dissipation
Symbo
l
PGM
PG(AV)
Min.
Max. Typ.
200
5
Units Conditions
W tp = 40 us
W
Peak gate current
Gate current required to trigger all
units
IGM
IGT
Gate voltage required to trigger all VGT
units
10
300
150
125
5
3
0.15
Peak negative voltage
VGRM
5
A
mA VD = 6 V;RL = 3 ohms;Tj = -40 oC
mA VD = 6 V;RL = 3 ohms;Tj = +25 oC
mA VD = 6 V;RL = 3 ohms;Tj = +125oC
V VD = 6 V;RL = 3 ohms;Tj = -40 oC
V VD = 6 V;RL = 3 ohms;Tj = 0-125oC
V VD = Rated VDRM; RL = 1000 ohms;
Tj = + 125 oC
V
Dynamic
Parameter
Delay time
Turn-off time (with VR = -50 V)
Reverse recovery charge
Symbo
l
td
Min.
tq
Qrr
Max. Typ. Units Conditions
1.5 0.7 µs
ITM = 50 A; VD = Rated VDRM
Gate pulse: VG = 20 V; RG = 20 ohms;
tr = 0.1 µs; tp = 20 µs
200 125 µs
ITM = 500 A; di/dt = 25 A/µs;
VR -50 V; Re-applied dV/dt = 20
V/µs linear to 80% VDRM; VG = 0;
Tj = 125 oC; Duty cPSTCle 0.01%
* µC ITM = 500 A; di/dt = 25 A/µs;
VR -50 V
* For guaranteed max. value, contact factory.
THERMAL AND MECHANICAL CHARACTERISTICS AND RATINGS
Parameter
Operating temperature
Storage temperature
Thermal resistance - junction to
case
Thermal resistamce - junction to
case
Thermal resistance - case to sink
Mounting force
Weight
Symbol
Tj
Tstg
Min.
-40
-40
Max.
+125
+150
Typ.
RΘ (j-c)
RΘ (j-c)
RΘ (c-s)
P
W
0.045
(1)
0.090
(1)
5.3
0.055
(2)
0.110
(2)
.030
.060
10
Units
oC
oC
Conditions
oC/W
oC/W
oC/W
Double sided cooled *
(1) @ 2000 lb.; (2) @ 800 lb.
Single sided cooled *
(1) @ 2000 lb.; (2) @ 800 lb.
Double sided cooled *
Single sided cooled *
kN
oz.
g
* Mounting surfaces smooth, flat and greased
Note : for case outline and dimensions, see case outline drawing in page 4 of this Technical Data


Features Datasheet pdf YN0734YS120 Page1 of 3 1200 VDRM; ***** *************************************** *************************************** ********************** HIGH POWER THYRI STOR FOR PHASE CONTROL APPLICATIONS Fea tures: . All Diffused Structure . Cente r Amplifying Gate Configuration . Guara nteed Maximum Turn-Off Time . High dV/d t Capability . Pressure Assembled Devic e ELECTRICAL CHARACTERISTICS AND RATING S Blocking - Off State Device Type VRR M (1) YN0734YS120 1200 VDRM (1) 1200 VRSM (1) 1300 VRRM = Repetitive peak r everse voltage VDRM = Repetitive peak o ff state voltage VRSM = Non repetitive peak reverse voltage (2) Repetitive pe ak reverse leakage and off state leakag e Critical rate of voltage rise (4) IR RM / IDRM dV/dt 15 mA 30 mA (3) 300 V/ µsec Conducting - on state Parameter Average value of on-state current RMS value of on-state current Peak one cPST Cle surge (non repetitive) current I sq uare t Latching current Holding current Peak on-state voltage Critical rate of rise of on-state curren.
Keywords YN0734YS120, datasheet, pdf, YZPST, HIGH, POWER, THYRISTOR, N0734YS120, 0734YS120, 734YS120, YN0734YS12, YN0734YS1, YN0734YS, Equivalent, stock, pinout, distributor, price, schematic, inventory, databook, Electronic, Components, Parameters, parts, cross reference, chip, Semiconductor, circuit, Electric, manual, substitute




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)