YR3370ZC12C Datasheet PDF | YZPST





(PDF) YR3370ZC12C Datasheet PDF

Part Number YR3370ZC12C
Description HIGH POWER THYRISTOR
Manufacture YZPST
Total Page 3 Pages
PDF Download Download YR3370ZC12C Datasheet PDF

Features: YR3370ZC12C Page1 of 3 **************** *************************************** *************************************** ************ HIGH POWER THYRISTOR FOR P HASE CONTROL APPLICATIONS Features: . All Diffused Structure . Interdigitated Amplifying Gate Configuration . Guaran teed Maximum Turn-Off Time . High dV/dt Capability . Pressure Assembled Device ELECTRICAL CHARACTERISTICS AND RATINGS CASE 5T Blocking - Off State Device Type VRRM (1) YR3370ZC12C 1200 VDRM (1) 1200 VRSM (1) 1300 VRRM = Repeti tive peak reverse voltage VDRM = Repeti tive peak off state voltage VRSM = Non repetitive peak reverse voltage (2) Re petitive peak reverse leakage and off s tate leakage Critical rate of voltage r ise IRRM / IDRM dV/dt (4) 20 mA 100 m A (3) 500 V/µsec Conducting - on stat e Parameter Average value of on-state c urrent RMS value of on-state current Pe ak one cPSTCle surge (non repetitive) c urrent I square t Latching current Hold ing current Peak on-state voltage Critical rate of rise of on-s.

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YR3370ZC12C datasheet
YR3370ZC12C
Page1 of 3
**********************************************************************************************************
HIGH POWER THYRISTOR FOR PHASE CONTROL APPLICATIONS
Features:
. All Diffused Structure
. Interdigitated Amplifying Gate Configuration
. Guaranteed Maximum Turn-Off Time
. High dV/dt Capability
. Pressure Assembled Device
ELECTRICAL CHARACTERISTICS AND RATINGS
CASE 5T
Blocking - Off State
Device Type VRRM (1)
YR3370ZC12C
1200
VDRM (1)
1200
VRSM (1)
1300
VRRM = Repetitive peak reverse voltage
VDRM = Repetitive peak off state voltage
VRSM = Non repetitive peak reverse voltage (2)
Repetitive peak reverse
leakage and off state leakage
Critical rate of voltage rise
IRRM / IDRM
dV/dt (4)
20 mA
100 mA (3)
500 V/µsec
Conducting - on state
Parameter
Average value of on-state current
RMS value of on-state current
Peak one cPSTCle surge
(non repetitive) current
I square t
Latching current
Holding current
Peak on-state voltage
Critical rate of rise of on-state
current (5, 6)
Critical rate of rise of on-state
current (6)
Symbol
IT(AV)
ITRMS
Min.
ITSM
I2t
IL
IH
VTM
di/dt
di/dt
Max. Typ.
3370
6850
43900
48300
9.5x106
1000
500
1.55
800
300
Notes:
All ratings are specified for Tj=25 oC unless
otherwise stated.
(1) All voltage ratings are specified for an applied
50Hz/60zHz sinusoidal waveform over the
temperature range -40 to +125 oC.
(2) 10 msec. max. pulse width
(3) Maximum value for Tj = 125 oC.
(4) Minimum value for linear and exponential
waveshape to 80% rated VDRM. Gate open.
Tj = 125 oC.
(5) Non-repetitive value.
(6) The value of di/dt is established in accordance
with EIA/NIMA Standard RS-397, Section
5-2-2-6. The value defined would be in addi-
tion to that obtained from a snubber circuit,
comprising a 0.2 µF capacitor and 20 ohms
resistance in parallel with the thristor under
test.
Units
A
A
A
A
A2s
mA
Conditions
conduction,Tc=55oC
Nominal value
8.3 msec (60Hz), sinusoidal wave-
shape, 180o conduction, Tj = 125 oC
10.0 msec (50Hz), sinusoidal wave-
shape, 180o conduction, Tj = 125 oC
8.3 msec
VD = 24 V; RL= 12 ohms
mA VD = 24 V; I = 2.5 A
V ITM = 3000 A;
A/µs
A/µs
Switching from VDRM 1000 V,
non-repetitive
Switching from VDRM 1000 V

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