N0910NS260

Technical Data : N0910NS260 Page 1 of 3 ********************************************************************************************************** HIGH POWER THYRISTOR FOR PHASE CONTROL APPLICATIONS Features: . All Diffused Structure . Center Amplifying Gate Configuration . Blocking capabilty up to 2600 volts . High dV/dt Capability . Pressure Assembled Device ELECTRICAL CHARACTERISTICS AND RATINGS Blocking - Off State Device Type VRRM (1) VDRM (1) VRSM (1) N0910NS260 2600 2600 2600 VRRM = Repetitive peak reverse voltage VDRM = Repetitive peak off state voltage VRSM = Non repetitive peak reverse voltage (2) Repetitive peak reverse leakage and off state leakage Critical rate of voltage rise IRRM / IDRM dV/dt (4) 60/60 mA 1000 V/µsec Conducting - on state Notes: All ratings are specified for Tj=25 oC unless otherwise stated. (1) All voltage ratings are specified for an applied 50Hz/60zHz sinusoidal waveform over the temperature range -40 to +125 oC. (2) 10 msec. max. puls...