SGA-8343

Product Description Sirenza Microdevices’ SGA-8343 is a high performance Silicon Germanium Heterostructure Bipolar Transistor (SiGe HBT) designed for operation from DC to 6 GHz. The SGA-8343 is optimized for 3V operation but can be biased at 2V for low-voltage battery operated systems. The device provides high gain, low NF, and excellent linearity at a low cost. It can be operated at very low bias currents in applications where high linearity is not required. The matte tin finish on Sirenza’s lead-free package utilizes a post annealing process to mitigate tin whisker formation and is RoHS compliant per EU Directive 2002/95. This package is also manufactured with green molding compounds that contain no antimony trioxide nor halogenated fire retardants. Gain, Gmax (dB) NFMIN (dB) 40 35 30 25 20 15 10 5 0 0 Typical Performance - 3V, 10mA NFMIN Gmax Gain 123 4567 Frequency (GHz) 2.4 2.1 1.8 1.5 1.2 0.9 0.6 0.3 0 8 SGA-8343 SGA-8343Z Pb RoHS Compliant & Green Package Preliminary ...