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LPM4953

Lowpowersemi

Dual P -Channel Enhancement Power MOSFET

Preliminary Datasheet LPM4953 Dual P -Channel Enhancement Power MOSFET General Description The LPM4953 integrates two ...


Lowpowersemi

LPM4953

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Description
Preliminary Datasheet LPM4953 Dual P -Channel Enhancement Power MOSFET General Description The LPM4953 integrates two P-Channel enhancement MOSFET Transistor. It uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for using in DC-DC conversion, power switch and charging circuit. Standard Product LPM4953 is Pb-free and Halogen-free. Features  Trench Technology  PMOS: VDS=-15V RDS(ON) < 65mΩ, ID=3.6A @ VGS=-4.5V RDS(ON) < 42mΩ, ID=5A @ VGS=-10V  Super high density cell design  Extremely Low Threshold Voltage  Small package SOP-8 Order Information LPM4593 □ □ □ F: Pb-Free Package Type SO: SOP-8 Applications  Driver for Relay, Solenoid, Motor, LED etc.  DC-DC converter circuit  Power Switch  Load Switch  Charging Pin Configurations Marking Information Device LPM4953 Marking Package SOP-8 Shipping 3K/REEL Pin Description Pin Number 1 2 3 4 5,6 7,8 Pin Description Source Of PM...




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