Preliminary Datasheet LPM4953
Dual P -Channel Enhancement Power MOSFET
General Description
The LPM4953 integrates two ...
Preliminary Datasheet LPM4953
Dual P -Channel Enhancement Power MOSFET
General Description
The LPM4953 integrates two P-Channel enhancement MOSFET
Transistor. It uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for using in DC-DC conversion, power switch and charging circuit. Standard Product LPM4953 is Pb-free and Halogen-free.
Features
Trench Technology PMOS: VDS=-15V
RDS(ON) < 65mΩ, ID=3.6A @ VGS=-4.5V RDS(ON) < 42mΩ, ID=5A @ VGS=-10V Super high density cell design Extremely Low Threshold Voltage Small package SOP-8
Order Information
LPM4593 □ □ □ F: Pb-Free
Package Type SO: SOP-8
Applications
Driver for Relay, Solenoid, Motor, LED etc. DC-DC converter circuit Power Switch Load Switch Charging
Pin Configurations
Marking Information
Device LPM4953
Marking
Package SOP-8
Shipping 3K/REEL
Pin Description
Pin Number 1 2 3 4 5,6 7,8
Pin Description Source Of PM...