LPM9007

Preliminary Datasheet LPM9007 30V/4A P-Channel Enhancement Mode Field Effect Transistor General Description The LPM9007 is the P-channel logic enhancement mode power field effect transistors are produced in using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications, notebook computer power management and other battery powered circuits where it is high-side switching. Order Information LPM9007 □ □ □ F: Pb-Free Package Type B3: SOT23-3 Features  -30V/-3.0A, RDC(ON)=52mΩ(typ.)@VGS=-4.5V  ■ -30V/-3.0A,RDC(ON)=80mΩ(typ.)@VGS=-2.5V  ■ Super high density cell design for extremely low RDC(ON)  ■ SOT23 Package Applications  Portable Media Players  Cellular and Smart mobile phone  LCD  DSC Sensor  Wireless Card Marking Information Device LPM9007 Marking Package SOT23-3 Shipping 3K/REEL Pin Configurations LPM...