Preliminary Datasheet LPM9007
30V/4A P-Channel Enhancement Mode Field Effect Transistor
General Description
The LPM900...
Preliminary Datasheet LPM9007
30V/4A P-Channel Enhancement Mode Field Effect
Transistor
General Description
The LPM9007 is the P-channel logic enhancement mode power field effect
transistors are produced in using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications, notebook computer power management and other battery powered circuits where it is high-side switching.
Order Information
LPM9007 □ □ □ F: Pb-Free
Package Type B3: SOT23-3
Features
-30V/-3.0A, RDC(ON)=52mΩ(typ.)@VGS=-4.5V ■ -30V/-3.0A,RDC(ON)=80mΩ(typ.)@VGS=-2.5V ■ Super high density cell design for extremely low
RDC(ON) ■ SOT23 Package
Applications
Portable Media Players Cellular and Smart mobile phone LCD DSC Sensor Wireless Card
Marking Information
Device LPM9007
Marking
Package SOT23-3
Shipping 3K/REEL
Pin Configurations
LPM...