LPM9017

Preliminary Datasheet LPM9017 LPM9017 - -30V/4A P-Channel Enhancement Mode Field Effect Transistor General Description The LPM9017 is the P-channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, notebook computer power management and other battery powered circuits where high-side switching. Ordering Information LPM9017- □ □ □ F: Pb-Free Package Type B3: SOT23 Features ■ -30V/-4A,RDS(ON)＜58mΩ(typ.)@VGS=-10V ■ -30V/-3.0A,RDS(ON)＜68mΩ(typ.)@VGS=-4.5V ■ Super high density cell design for extremely low RDS(ON) ■ SOT23 Package Applications  Portable Media Players  Cellular and Smart mobile phone  LCD  DSC Sensor  Wireless Card  Marking Information Please see website. Pin Configurations SOT23L(Top View) LPM9017 – 00 Version 1.0 Data...