Preliminary Datasheet
LPM9017
LPM9017 - -30V/4A P-Channel Enhancement Mode Field Effect Transistor
General Descriptio...
Preliminary Datasheet
LPM9017
LPM9017 - -30V/4A P-Channel Enhancement Mode Field Effect
Transistor
General Description
The LPM9017 is the P-channel logic enhancement mode power field effect
transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, notebook computer power management and other battery powered circuits where high-side switching.
Ordering Information
LPM9017- □ □ □
F: Pb-Free
Package Type B3: SOT23
Features
■ -30V/-4A,RDS(ON)<58mΩ(typ.)@VGS=-10V ■ -30V/-3.0A,RDS(ON)<68mΩ(typ.)@VGS=-4.5V ■ Super high density cell design for extremely
low RDS(ON) ■ SOT23 Package
Applications
Portable Media Players Cellular and Smart mobile phone LCD DSC Sensor Wireless Card
Marking Information
Please see website.
Pin Configurations
SOT23L(Top View)
LPM9017 – 00 Version 1.0 Data...