Preliminary Datasheet LPM3414
20V/3A N-Channel Enhancement Mode Field Effect Transistor
The LPM3414 is N-channel logic enhancement mode
power field effect transistor, which are produced by
using high cell density, DMOS trench technology.
This high density process is especially tailored to
minimize on-state resistance.
These devices are particularly suitable for low voltage
applications, notebook computer power management
and other battery powered circuits where high-side
switching is needed.
LPM3414 □ □ □
Super high density cell design for extremely low
Portable Media Players/MP3 players
Cellular and Smart mobile phone
LPM3413 Please see website.
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