LPM9029C

Preliminary Datasheet LPM9029C N and P-Channel Enhancement Power MOSFET General Description The LPM9029C integrates N-Channel and P-Channel enhancement MOSFET Transistor. It uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for using in DC-DC conversion, power switch and charging circuit. Standard Product LPM9029C is Pb-free and Halogen-free. Order Information LPM9022 □ □ □ F: Pb-Free Package Type SO: SOP-8 Marking Information Device Marking LPM9029C Package SOP-8 Shipping 3K/REEL Features  Trench Technology  NMOS: VNDS=20V, IND=12A RNDS(ON) < 26mΩ @ VGS=2.5V RNDS(ON) < 20mΩ @ VGS=4.5V  PMOS: VPDS=-20V, IPD=-4.5A RPDS(ON) < 100mΩ @ VGS=-2.5V RPDS(ON) < 68mΩ @ VGS=-4.5V  Super high density cell design  Extremely Low Threshold Voltage  Small package SOP-8 Applications  Driver for Relay, Solenoid, Motor, LED etc.  DC-DC converter circuit  Power Switch  Load Switch  Cha...