Preliminary Datasheet LPM9022
Dual N -Channel Enhancement Power MOSFET
General Description
The LPM9022 integrates two ...
Preliminary Datasheet LPM9022
Dual N -Channel Enhancement Power MOSFET
General Description
The LPM9022 integrates two N-Channel enhancement MOSFET
Transistor. It uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for using in DC-DC conversion, power switch and charging circuit. Standard Product LPM9022 is Pb-free and Halogen-free.
Features
Trench Technology Single NMOS: VDS=20V, ID=6A
RDS(ON) < 26mΩ @ VGS=2.5V RDS(ON) < 20mΩ @ VGS=4.5V Super high density cell design Extremely Low Threshold Voltage Small package DFN-6L 2*3mm
Order Information
LPM9022 □ □ □ F: Pb-Free
Package Type QV: DFN-6L
Applications
Driver for Relay, Solenoid, Motor, LED etc. DC-DC converter circuit Power Switch Load Switch Charging
Pin Configurations
S1 1 S1 2 G1 3
Pad D1/2
6 S2 5 S2 4 G2
D1/2
G1 G2 S1 S2
Marking Information
Device
Marking Package
LPM9022
DFN-6L
Shipping 3K/REEL
Pin D...