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SGA-1263 Dataheets PDF



Part Number SGA-1263
Manufacturers RFMD
Logo RFMD
Description DC to 4000MHz SILICON GERMANIUM HBT CASCADABLE GAIN BLOCK
Datasheet SGA-1263 DatasheetSGA-1263 Datasheet (PDF)

SGA-1263(Z) DC to 4000 MH z Silicon Germanium HBT Cascadable Gain Block SGA-1263(Z) DCto4000MHz SILICON GERMANIUM HBT CASCADABLE GAIN BLOCK Package: SOT-363 Product Description RFMD’s SGA-1263(Z) is a Silicon Germanium HBT Heterostructure Bipolar Transistor (SiGe HBT) amplifier that offers excellent isolation and flat gain response for application to 4GHz. This RFIC is a 2-stage design that provides high isolation of up to 40dB at 2GHz and is fabricated using the latest SiGe HBT 50GHz FT pr.

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SGA-1263(Z) DC to 4000 MH z Silicon Germanium HBT Cascadable Gain Block SGA-1263(Z) DCto4000MHz SILICON GERMANIUM HBT CASCADABLE GAIN BLOCK Package: SOT-363 Product Description RFMD’s SGA-1263(Z) is a Silicon Germanium HBT Heterostructure Bipolar Transistor (SiGe HBT) amplifier that offers excellent isolation and flat gain response for application to 4GHz. This RFIC is a 2-stage design that provides high isolation of up to 40dB at 2GHz and is fabricated using the latest SiGe HBT 50GHz FT process, featuring one-micron emitters with VCEO>7V. These unconditionally stable amplifiers have less than 1dB gain drift over 125°C operating range (-40°C to +85°C) and are ideal for use as buffer amplifiers in oscillator applications covering Optimum Technology cellular, ISM, and narrowband PCS bands. Matching® Applied GaAs HBT GaAs MESFET Isolation vs. Frequency InGaP HBT 0 SiGe BiCMOS Si BiCMOS 9 SiGe HBT GaAs pHEMT -2 0 dB -4 0 Si CMOS -6 0 Si BJT GaN HEMT -8 0 100 500 900 190.


LPM9022 SGA-1263 SGA-1263Z


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