SGA-1263(Z) DC to 4000 MH z Silicon Germanium HBT Cascadable Gain Block
SGA-1263(Z)
DCto4000MHz SILICON GERMANIUM HBT ...
SGA-1263(Z) DC to 4000 MH z Silicon Germanium HBT Cascadable Gain Block
SGA-1263(Z)
DCto4000MHz SILICON GERMANIUM HBT CASCADABLE GAIN BLOCK
Package: SOT-363
Product Description
RFMD’s SGA-1263(Z) is a Silicon Germanium HBT Heterostructure Bipolar
Transistor (SiGe HBT) amplifier that offers excellent isolation and flat gain response for application to 4GHz. This RFIC is a 2-stage design that provides high isolation of up to 40dB at 2GHz and is fabricated using the latest SiGe HBT 50GHz FT process, featuring one-micron emitters with VCEO>7V. These unconditionally stable amplifiers have less than 1dB gain drift over 125°C operating range (-40°C to +85°C) and are ideal for use
as buffer amplifiers in oscillator applications covering Optimum Technology cellular, ISM, and narrowband PCS bands.
Matching® Applied
GaAs HBT
GaAs MESFET Isolation vs. Frequency
InGaP HBT 0
SiGe BiCMOS
Si BiCMOS
9 SiGe HBT
GaAs pHEMT
-2 0
dB
-4 0
Si CMOS
-6 0
Si BJT GaN HEMT
-8 0
100 500 900 190...
