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74HC4066D Dataheets PDF



Part Number 74HC4066D
Manufacturers Toshiba
Logo Toshiba
Description Quad Bilateral Switch
Datasheet 74HC4066D Datasheet74HC4066D Datasheet (PDF)

CMOS Digital Integrated Circuits Silicon Monolithic 74HC4066D 74HC4066D 1. Functional Description • Quad Bilateral Switch 2. General The 74HC4066D is high-speed CMOS QUAD BILATERAL SWITCH fabricated with silicon gate C2MOS technology. It consists of four independent high speed switches capable of controlling either digital or analog signals while maintaining the CMOS low power dissipation. Control input(C) is provided to control the switch. The switch turns ON while the C input is High, and th.

  74HC4066D   74HC4066D



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CMOS Digital Integrated Circuits Silicon Monolithic 74HC4066D 74HC4066D 1. Functional Description • Quad Bilateral Switch 2. General The 74HC4066D is high-speed CMOS QUAD BILATERAL SWITCH fabricated with silicon gate C2MOS technology. It consists of four independent high speed switches capable of controlling either digital or analog signals while maintaining the CMOS low power dissipation. Control input(C) is provided to control the switch. The switch turns ON while the C input is High, and the switch turns OFF while low. All inputs are equipped with protection circuits against static discharge or transient excess voltage. 3. Features (1) Wide operating temperature range: Topr = -40 to 125 � (Note 1) (2) Low power dissipation: ICC = 1.0 µA (max) at VCC = 6.0 V, Ta = 25 � (3) High noise immunity: VNIH = VNIL = 28 % VCC (min) (4) Low ON resistance: RON = 50 Ω (typ.) at VCC = 9.0 V, VI/O = VCC or GND (5) High degree of linearity: THD = 0.05 % (typ.) at VCC = 4.5 V Note 1: Operating Range spec of Topr = -40 � to 125 � is applicable only for the products which manufactured after July 2020. 4. Packaging SOIC14 ©2016-2020 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2020-07 2020-11-24 Rev.2.0 5. Pin Assignment 74HC4066D 6. Marking 7. Truth Table Control H L Switch Function On Off 8. System Diagram (per circuit) ©2016-2020 2 Toshiba Electronic Devices & Storage Corporation 2020-11-24 Rev.2.0 9. Absolute Maximum Ratings (Note) 74HC4066D Characteristics Symbol Note Rating Unit Supply voltage VCC -0.5 to 13.0 V Input voltage VIN -0.5 to VCC + 0.5 V Switch I/O voltage Input diode current I/O diode current Switch through current VCC/ground current VI/O -0.5 to VCC + 0.5 V IIK ±20 mA II/OK ±20 mA IT ±25 mA ICC ±50 mA Power dissipation Storage temperature PD (Note 1) 500 mW Tstg -65 to 150 � Note: Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or even destruction. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: PD derates linearly with -8 mW/� above 85 �. 10. Operating Ranges (Note) Characteristics Symbol Note Rating Unit Supply voltage VCC 2.0 to 12 V Input voltage VIN 0 to VCC V Switch I/O voltage Operating temperature Input rise and fall times VI/O 0 to VCC V Topr (Note 1) -40 to 125 � tr,tf 0 to 50 µs Note: The operating.


K4B8G1646D 74HC4066D LME0503D


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