Gate resistor installed Dual N-channel MOS FET
DReovcisNioon. . T3 T4-EA-14491
FC8V22080L
Gate resistor installed Dual N-channel MOS FET
For lithium-ion secondary bat...
Description
DReovcisNioon. . T3 T4-EA-14491
FC8V22080L
Gate resistor installed Dual N-channel MOS FET
For lithium-ion secondary battery protection circuits
Features
y Low drain-source ON resistance:Rds(on) typ. = 13 mΩ(VGS = 4.5 V) y Built-in gate resistor y Halogen-free / RoHS compliant
(EU RoHS / UL-94 V-0 / MSL:Level 1 compliant)
Marking Symbol: 4D
Packaging
Embossed type (Thermo-compression sealing) : 3 000 pcs / reel (standard)
Absolute Maximum Ratings Ta = 25 °C
Parameter
Symbol
Rating
Unit
Drain-source Voltage
VDS
24
V
Gate-source Voltage
DC *1
Drain Current DC *2
Pulse *3
Total power dissipation
Ta = 25 °C, DC *1 Ta = 25 °C, DC *2 Ta = 25 °C, t = 10 s *1
Channel Temperature
VGS ID1 ID2 IDp PD1 PD2 PD3 Tch
±12 7 10 70 1.0 2.0 1.2
150
V A A A
W
°C
Storage Temperature Range
Tstg -55 to +150 °C
Thermal resistance (ch-a)
Rth(ch-a)
125
°C/W
Note *1 Mounted on FR4 board ( 25.4 mm × 25.4 mm × t0.8 mm )
Copper foil of the drain portion should hav...
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