Thyristors. C106B Datasheet

C106B Thyristors. Datasheet pdf. Equivalent

Part C106B
Description Thyristors
Feature C106 Series Pin Out 3 21 Thyristors Surface Mount > 200 - 600V > C106 Series Pb Description Glassi.
Manufacture Littelfuse
Datasheet
Download C106B Datasheet

C106 Series Preferred Devices Sensitive Gate Silicon Contro C106B Datasheet
www.DataSheet4U.com SEMICONDUCTOR TECHNICAL DATA MOTOROLA C106B Datasheet
www.DataSheet4U.com C106B Datasheet
C106 SERIES High-reliability discrete products and engineer C106B Datasheet
C106 Rev.D Oct.-2015 DATA SHEET / Descriptions TO-92 Thyr C106B Datasheet
C106 Series Pin Out 3 21 Thyristors Surface Mount > 200 - 6 C106B Datasheet
C106A1 C106D1 C106B1 C106E1 C106C1 C106M1 SILICON CONTROLLED C106B1 Datasheet
C106B2 Datasheet
C106B2 C106D2 C106M2 SENSITIVE GATE SILICON CONTROLLED RECTI C106B2 Datasheet
C106B21 Datasheet
Recommendation Recommendation Datasheet C106B Datasheet




C106B
C106 Series
Pin Out
3 21
Thyristors
Surface Mount > 200 - 600V > C106 Series
Pb
Description
Glassivated PNPN devices designed for high volume
consumer applications such as temperature, light, and
speed control; process and remote control, and warning
systems where reliability of operation is important.
Features
• Glassivated Surface for
Reliability and Uniformity
• Power Rated at
Economical Prices
• Practical Level
Triggering and Holding
Characteristics
• Flat, Rugged, Thermopad
Construction for Low
Thermal Resistance, High
Heat Dissipation and
Durability
• Sensitive Gate Triggering
• These are Pb−Free
Devices
Functional Diagram
A,2
G,3
K,1
TO-225A A
Case 77
Style 2
Additional Information
Datasheet
Resources
Samples
© 2020 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 08/11/20



C106B
Thyristors
Surface Mount > 200 - 600V > C106 Series
Maximum Ratings (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Peak Repetitive Off−State Voltage
(Sine Wave, 50−60 Hz, RGK = 1 K,
TC = −40° to 110°C)
C106B
C106D, C106D1*
C106M
VDRM,
VRRM
200
400
600
V
On-State RMS Current (180° Conduction Angles, TC = 80°C)
Average On−State Current (180° Conduction Angles, TC = 80°C)
Peak Non-Repetitive Surge Current
(1/2 Cycle, Sine Wave, 60 Hz, TJ = +25°C)
Circuit Fusing Considerations (t = 8.3 ms)
IT (RMS)
IT(AV)
ITSM
I2t
4.0
2.55
20
1.65
A
A
A
A2s
Forward Peak Gate Current
(Pulse Width 1.0 sec, TC = 80°C)
IGM
0.2
A
Forward Peak Gate Power (Pulse Width ≤ 1.0 µsec, TC = 80°C)
Forward Average Gate Power (Pulse Width ≤ 1.0 µsec, TC = 80°C)
Operating Junction Temperature Range
Storage Temperature Range
Mounting Torque (Note 2)
PGM
PG(AV)
TJ
Tstg
_
0.5
0.1
-40 to +110
-40 to +150
6.0
W
W
°C
°C
in. lb.
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages
shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.
2. Torque rating applies with use of torque washer (Shakeproof WD19523 or equivalent). Mounting Torque in excess of 6 in. lb. does not appreciably lower case-to-sink thermal resistance. Main terminal 2 and heat-sink contact pad
are common.
Thermal Characteristics
Rating
Thermal Resistance,
Junction−to−Case (AC)
Junction−to−Ambient
Maximum Lead Temperature for Soldering Purposes, 1/8” from case for
10 seconds
Symbol
RƟJC
RƟJA
TL
Value
3.0
75
260
Unit
°C/W
°C
Electrical Characteristics - OFF (TJ = 25°C unless otherwise noted)
Characteristic
Peak Repetitive Forward or Reverse Blocking Current
(VAK = Rated VDRM or VRRM, RGK = 1 Ωk)
TJ = 25°C
TJ = 110°C
Symbol
IDRM, IRRM
Electrical Characteristics - ON (TJ = 25°C unless otherwise noted)
Characteristic
Peak Forward On-State Voltage (Note 3) (ITM = 4 A)
Gate Trigger Current (Continuous dc)
(VD = 12 V, RL = 100 Ω, All Quadrants)
Peak Reverse Gate Voltage (IGR = 10 µA)
Gate Trigger Voltage (Continuous dc)
(VD = 12 Vdc, RL = 100 Ω, TC = 25°C)
Gate Non−Trigger Voltage (Continuous dc) (Note 4)
(VAK = 12 V, RL = 100
(VAK = 12 V, RL = 100 , TJ = 110°C), TJ = 110°C)
Latching Current
(VAK = 12 V, IG = 20 mA, RGK = 1 kΩ)
Holding Current
(VD = 12 Vdc)
(Initiating Current = 20 mA, RGK = 1 kΩ)
TJ = 25°C
TJ = -40°C
TJ = 25°C
TJ = -40°C
TJ = 25°C
TJ = -40°C
TJ = 25°C
TJ = -40°C
TJ = +110°C
Symbol
VTM
IGT
VGRM
VGT
VGD
IL
IH
Min
_
Min
_
0.4
0.5
0.2
_
_
_
_
Typ
Max
Unit
_
10
μA
100
µA
Typ
Max
Unit
2.2
V
15
200
µA
35
500
6.0
V
0.60
0.8
V
0.75
1.0
_
_
V
0.20
5.0
mA
0.35
7.0
0.19
3.0
0.33
6.0
mA
0.07
2.0
© 2020 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 08/11/20





@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)