SBA5089Z

SBA5089ZSBA5089Z DCto5GHz, CASCADABLE InGaP/GaAs HBT MMIC AMPLIFIER Package: SOT-89 Product Description RFMD’s SBA5089Z is a high performance InGaP/GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance up to 5GHz with excellent thermal performance. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. Cancellation of emitter junction non-linearities results in higher suppression of intermodulation products. Only a single positive supply voltage, DC-blocking capacitors, a bias resistor, and an optional RF choke are required for operation. Optimum Technology Matching® Applied GaAs HBT GaAs MESFET  InGaP HBT SiGe BiCMOS Si BiCMOS SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT InP HBT RF MEMS LDMOS 30 20 10 0 -10 -20 -30 -40 0 Gain & Return Loss S21 S22 S11 1234 Frequency (GHz) 5 6 Features  IP3=34.0dBm at 1950MHz  POUT=13.0dBm at -4...