N-Channel IGBT. 50JR22 Datasheet

50JR22 IGBT. Datasheet pdf. Equivalent

50JR22 Datasheet
Recommendation 50JR22 Datasheet
Part 50JR22
Description Silicon N-Channel IGBT
Feature 50JR22; Discrete IGBTs Silicon N-Channel IGBT GT50JR22 GT50JR22 1. Applications • Dedicated to Current-Res.
Manufacture Toshiba
Datasheet
Download 50JR22 Datasheet





Toshiba 50JR22
Discrete IGBTs Silicon N-Channel IGBT
GT50JR22
GT50JR22
1. Applications
• Dedicated to Current-Resonant Inverter Switching Applications
Note: The product(s) described herein should not be used for any other application.
2. Features
(1) 6.5th generation
(2) The RC-IGBT consists of a Freewheeling Diode(FWD) monolithically integrated in an IGBT chip.
(3) Enhancement mode
(4) High-speed switching
IGBT : tf = 0.05 µs (typ.) (IC = 50 A)
FWD : trr = 0.35 µs (typ.) (IF = 15 A)
(5) Low saturation voltage : VCE(sat) = 1.55 V (typ.) (IC = 50 A)
(6) High junction temperature : Tj = 175(max)
3. Packaging and Internal Circuit
TO-3P(N)
1: Gate
2: Collector
3: Emitter
Start of commercial production
2012-03
1 2014-01-06
Rev.2.0



Toshiba 50JR22
GT50JR22
4. Absolute Maximum Ratings (Note) (Ta = 25, unless otherwise specified)
Characteristics
Symbol
Rating
Unit
Collector-emitter voltage
Gate-emitter voltage
Collector current (DC)
Collector current (DC)
(Tc = 25)
(Tc = 100)
VCES 600 V
VGES
±25
IC 50 A
44
Collector current (1 ms)
Diode forward current (DC)
Diode forward current (100 µs)
Collector power dissipation
Collector power dissipation
Junction temperature
Storage temperature
Mounting torque
(Tc = 25)
(Tc = 100)
(Note 1)
ICP
IF
IFP
PC
Tj
Tstg
TOR
100
40
100
230
115
175
-55 to 175
0.8
W
Nm
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
In general, loss of IGBT increases more when it has positive temperature coefficient and gets higher
temperature.
In case that the temperature rise due to loss of IGBT exceeds the heat release capacity of a device, it leads
to thermorunaway and results in destruction.
Therefore, please design heat release of a device with due consideration to the temperature rise of IGBT.
Note 1: Ensure that the junction temperature does not exceed 175.
5. Thermal Characteristics
Characteristics
Junction-to-case thermal resistance
Symbol
Rth(j-c)
Max Unit
0.65 /W
2 2014-01-06
Rev.2.0



Toshiba 50JR22
GT50JR22
6. Electrical Characteristics
6.1. Static Characteristics (Ta = 25, unless otherwise specified)
Characteristics
Gate leakage current
Collector cut-off current
Gate-emitter cut-off voltage
Collector-emitter saturation voltage
Diode forward voltage
Symbol
Test Condition
IGES
ICES
VGE(OFF)
VCE(sat)
VF
VGE = ±25 V, VCE = 0 V
VCE = 600 V, VGE = 0 V
IC = 50 mA, VCE = 5 V
IC = 50 A, VGE = 15 V
IF = 15 A, VGE = 0 V
Min
4.5
6.2. Dynamic Characteristics (Ta = 25, unless otherwise specified)
Typ. Max
±100
1
7.5
1.55 2.2
2.1
Unit
nA
mA
V
Characteristics
Input capacitance
Switching time (rise time)
Switching time (turn-on time)
Switching time (fall time)
Switching time (turn-off time)
Reverse recovery time
Symbol
Test Condition
Cies VCE = 10 V, VGE = 0 V,
f = 1 MHz
tr Resistive load
ton
VCC = 300 V, IC = 50 A,
VGG = ±15 V, RG = 39
tf See Fig. 6.2.1, 6.2.2.
toff
trr IF = 15 A, VGE = 0 V,
di/dt = -20 A/µs
Min Typ. Max Unit
2700
pF
0.18
µs
0.25
0.05 0.18
0.33
0.35
Fig. 6.2.1 Test Circuit of Switching Time
7. Marking (Note)
Fig. 6.2.2 Timing Chart of Switching Time
Fig. 7.1 Marking
Note:
A line under a Lot No. identifies the indication of product Labels.
[[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS
compatibility of Product.
The RoHS is the Directive 2011/65/EU of the European Parliament and of the Council of 8 June 2011 on the
restriction of the use of certain hazardous substances in electrical and electronic equipment.
Note: This transistor is sensitive to electrostatic discharge and should be handled with care.
3 2014-01-06
Rev.2.0





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