50JR22 IGBT Datasheet

50JR22 Datasheet, PDF, Equivalent


Part Number

50JR22

Description

Silicon N-Channel IGBT

Manufacture

Toshiba

Total Page 7 Pages
Datasheet
Download 50JR22 Datasheet


50JR22
Discrete IGBTs Silicon N-Channel IGBT
GT50JR22
GT50JR22
1. Applications
• Dedicated to Current-Resonant Inverter Switching Applications
Note: The product(s) described herein should not be used for any other application.
2. Features
(1) 6.5th generation
(2) The RC-IGBT consists of a Freewheeling Diode(FWD) monolithically integrated in an IGBT chip.
(3) Enhancement mode
(4) High-speed switching
IGBT : tf = 0.05 µs (typ.) (IC = 50 A)
FWD : trr = 0.35 µs (typ.) (IF = 15 A)
(5) Low saturation voltage : VCE(sat) = 1.55 V (typ.) (IC = 50 A)
(6) High junction temperature : Tj = 175(max)
3. Packaging and Internal Circuit
TO-3P(N)
1: Gate
2: Collector
3: Emitter
Start of commercial production
2012-03
1 2014-01-06
Rev.2.0

50JR22
GT50JR22
4. Absolute Maximum Ratings (Note) (Ta = 25, unless otherwise specified)
Characteristics
Symbol
Rating
Unit
Collector-emitter voltage
Gate-emitter voltage
Collector current (DC)
Collector current (DC)
(Tc = 25)
(Tc = 100)
VCES 600 V
VGES
±25
IC 50 A
44
Collector current (1 ms)
Diode forward current (DC)
Diode forward current (100 µs)
Collector power dissipation
Collector power dissipation
Junction temperature
Storage temperature
Mounting torque
(Tc = 25)
(Tc = 100)
(Note 1)
ICP
IF
IFP
PC
Tj
Tstg
TOR
100
40
100
230
115
175
-55 to 175
0.8
W
Nm
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
In general, loss of IGBT increases more when it has positive temperature coefficient and gets higher
temperature.
In case that the temperature rise due to loss of IGBT exceeds the heat release capacity of a device, it leads
to thermorunaway and results in destruction.
Therefore, please design heat release of a device with due consideration to the temperature rise of IGBT.
Note 1: Ensure that the junction temperature does not exceed 175.
5. Thermal Characteristics
Characteristics
Junction-to-case thermal resistance
Symbol
Rth(j-c)
Max Unit
0.65 /W
2 2014-01-06
Rev.2.0


Features Discrete IGBTs Silicon N-Channel IGBT GT 50JR22 GT50JR22 1. Applications • D edicated to Current-Resonant Inverter S witching Applications Note: The product (s) described herein should not be used for any other application. 2. Features (1) 6.5th generation (2) The RC-IGBT c onsists of a Freewheeling Diode(FWD) mo nolithically integrated in an IGBT chip . (3) Enhancement mode (4) High-speed s witching IGBT : tf = 0.05 µs (typ.) (I C = 50 A) FWD : trr = 0.35 µs (typ.) ( IF = 15 A) (5) Low saturation voltage : VCE(sat) = 1.55 V (typ.) (IC = 50 A) ( 6) High junction temperature : Tj = 175  (max) 3. Packaging and Internal Cir cuit TO-3P(N) 1: Gate 2: Collector 3: Emitter Start of commercial productio n 2012-03 1 2014-01-06 Rev.2.0 GT50JR2 2 4. Absolute Maximum Ratings (Note) ( Ta = 25, unless otherwise specified) Characteristics Symbol Rating Unit Collector-emitter voltage Gate-emitte r voltage Collector current (DC) Collec tor current (DC) (Tc = 25) (Tc = 100) VCES 600 V VGES .
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