Epitaxial Diode. DSEC60-04A Datasheet

DSEC60-04A Diode. Datasheet pdf. Equivalent

Part DSEC60-04A
Description Epitaxial Diode
Feature DSEC 60-04A HiPerFREDTM Epitaxial Diode with common cathode and soft recovery Preliminary Data IFA.
Manufacture IXYS
Datasheet
Download DSEC60-04A Datasheet

DSEC 60-04A HiPerFREDTM Epitaxial Diode with common cathode DSEC60-04A Datasheet
Recommendation Recommendation Datasheet DSEC60-04A Datasheet




DSEC60-04A
DSEC 60-04A
HiPerFREDTM Epitaxial Diode
with common cathode and soft recovery
Preliminary Data
IFAV = 2x30 A
VRRM = 400 V
trr = 30 ns
VRSM
V
400
VRRM
V
400
Type
DSEC 60-04A
AC
A TO-247 AD
A
C C (TAB)
A
A = Anode, C = Cathode, TAB = Cathode
D4
Symbol
IFRMS
IFAVM
IFSM
EAS
IAR
TVJ
TVJM
Tstg
Ptot
Md
Weight
Symbol
IR
VF
RthJC
RthCH
trr
IRM
Conditions
TC = 140°C; rectangular, d = 0.5
TVJ = 45°C; tp = 10 ms (50 Hz), sine
TVJ = 25°C; non-repetitive
IAS = tbd A; L = tbd µH
VA = 1.5·VR typ.; f = 10 kHz; repetitive
TC = 25°C
mounting torque
typical
Conditions
TVJ = 25°C VR = VRRM
TVJ = 150°C VR = VRRM
IF = 30 A; TVJ = 150°C
TVJ = 25°C
IF = 1 A; -di/dt = 300 A/µs;
VR = 30 V; TVJ = 25°C
VR = 100 V; IF = 50 A; -diF/dt = 100 A/µs
TVJ = 100°C
Maximum Ratings
70 A
30 A
tbd A
tbd mJ
tbd
-55...+175
175
-55...+150
165
0.8...1.2
6
A
°C
°C
°C
W
Nm
g
Characteristic Values
typ. max.
250 µA
1 mA
1.09 V
1.49 V
0.9 K/W
0.25 K/W
30 ns
5.5 6.8 A
Features
• International standard package
• Planar passivated chips
• Very short recovery time
• Extremely low switching losses
• Low IRM-values
• Soft recovery behaviour
• Epoxy meets UL 94V-0
Applications
• Antiparallel diode for high frequency
switching devices
• Antisaturation diode
• Snubber diode
• Free wheeling diode in converters
and motor control circuits
• Rectifiers in switch mode power
supplies (SMPS)
• Inductive heating
• Uninterruptible power supplies (UPS)
• Ultrasonic cleaners and welders
Advantages
• Avalanche voltage rated for reliable
operation
• Soft reverse recovery for low
EMI/RFI
• Low IRM reduces:
- Power dissipation within the diode
- Turn-onlossinthecommutatingswitch
Dimensions see Outlines.pdf
Pulse test: Pulse Width = 5 ms, Duty Cycle < 2.0 %
Pulse Width = 300 µs, Duty Cycle < 2.0 %
Data according to IEC 60747 and per diode unless otherwise specified
IXYS reserves the right to change limits, test conditions and dimensions.
© 2007 IXYS All rights reserved
Recommended replacement:
DPG 60C400HB
1-2



DSEC60-04A
DSEC 60-04A
70
A
60
IF 50
40
30
TVJ=150°C
TVJ=100°C
TVJ= 25°C
20
10
0
0.0 0.5 1.0 1.5 V 2.0
VF
Fig. 1 Forward current IF versus VF
2.0
1.5
Kf
1.0
0.5
IRM
Qr
1600
nC
TVJ= 100°C
VR = 200V
1200
Qr
800
IF= 60A
IF= 30A
IF= 15A
400
0
100 A/µs 1000
-diF/dt
Fig. 2 Reverse recovery charge Qr
versus -diF/dt
90
ns
trr 80
70
T = 100°C
VJ
V = 200V
R
IF= 60A
IF= 30A
IF= 15A
60
50
A
IRM 40
TVJ= 100°C
VR = 200V
30
IF= 60A
IF= 30A
20 IF= 15A
10
0
0 200 400 600 A8/0µ0s 1000
-diF/dt
Fig. 3 Peak reverse current IRM
versus -diF/dt
15
V
VFR
tfr
10
TVJ= 100°C
IF = 30A
0.6
µs
tfr
0.4
VFR
5 0.2
0.0
0
40 80 120 °C 160
TVJ
Fig. 4 Dynamic parameters Qr, IRM
versus TVJ
1
K/W
50
0 200 400 600 A8/0µ0s 1000
-diF/dt
Fig. 5 Recovery time trr versus -diF/dt
0.1
ZthJC
0 0.0
0 200 400 600 A80/µ0s 1000
diF/dt
Fig. 6 Peak forward voltage VFR and tfr
versus diF/dt
Constants for ZthJC calculation:
i
Rthi (K/W)
ti (s)
1 0.465
2 0.179
3 0.256
0.0052
0.0003
0.0396
0.01
0.001
0.00001
0.0001
0.001
0.01
Fig. 7 Transient thermal resistance junction to case
NOTE: Fig. 2 to Fig. 6 shows typical values
2-2
DSEP 30-04A / DSEC 60-04A
0.1 s
t
1
© 2007 IXYS All rights reserved





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