PD57002-E

PD57002-E RF power transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Datasheet — production data Features ■ Excellent thermal stability ■ Common source configuration ■ POUT = 2 W with 15dB gain @ 960 MHz / 28 V ■ New RF plastic package Description The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1 GHz. The device is designed for high gain and broadband performance operating in common source mode at 28 V. It is ideal for digital cellular BTS applications requiring high linearity. The PowerSO-10 plastic package, designed to offer high reliability, is the first ST JEDEC approved, high power SMD package. It has been specially optimized for RF needs and offers excellent RF performance and ease of assembly. PowerSO-10RF (formed lead) Figure 1. Pin connection Source Gate Drain Table 1. Device summary Order code PD5...