M52D5123216A

ESMT Mobile SDRAM M52D5123216A 4M x 32 Bit x 4 Banks Mobile Synchronous DRAM FEATURES y 1.8V power supply y LVCMOS compatible with multiplexed address y Four banks operation y MRS cycle with address key programs - CAS Latency (2, 3) - Burst Length (1, 2, 4, 8 & full page) - Burst Type (Sequential & Interleave) y EMRS cycle with address y All inputs are sampled at the positive going edge of the system clock y Special function support - PASR (Partial Array Self Refresh) - TCSR (Temperature Compensated Self Refresh) - DS (Driver Strength) - Deep Power Down (DPD) Mode y DQM for masking y Auto & self refresh y 64ms refresh period (8K cycle) ORDERING INFORMATION Product ID Max Freq. Package Comments M52D5123216A-6BG M52D5123216A-7BG 166MHz 90 Ball BGA 143MHz 90 Ball BGA Pb-free Pb-free GENERAL DESCRIPTION The M52D5123216A is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 4,194,304 words by 32 bits. Synchronous design allows precise cycle controls with the u...