VN2206

VN2206 VN2210 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / BVDGS 60V 100V RDS(ON) (max) 0.35Ω 0.35Ω † MIL visual screening available Features s Free from secondary breakdown s Low power drive requirement s Ease of paralleling s Low CISS and fast switching speeds s Excellent thermal stability s Integral Source-Drain diode s High input impedance and high gain s Complementary N- and P-channel devices ID(ON) (min) 8A 8A Order Number / Package TO-39 TO-92 Die† VN2206N2 VN2206N3 VN2206ND VN2210N2 VN2210N3 VN2210ND Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from ...