N-Channel Enhancement Mode Power MOSFET
RM80N30LD
N-Channel Enhancement Mode Power MOSFET
Description
The RM80N30LD uses advanced trench technology and design ...
Description
RM80N30LD
N-Channel Enhancement Mode Power MOSFET
Description
The RM80N30LD uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features
ƽ VDS =30V,ID =80A RDS(ON) <6.5mΩ @ VGS=10V RDS(ON) < 10mΩ @ VGS=5V
ƽ High density cell design for ultra low Rdson ƽ Fully characterized avalanche voltage and current ƽ Good stability and uniformity with high EAS ƽ Excellent package for good heat dissipation
Application
ƽ Power switching application ƽ Hard switched and high frequency circuits ƽ Uninterruptible power supply
Schematic diagram Marking and pin assignment
100% UIS TESTED!
Package Marking and Ordering Information
Device Marking
Device
Device Package
80N30
RM80N30LD
TO-252-2L
Reel Size -
D GS TO-252-2L top view
Tape width -
Quantity -
Absolute Maximum Ratings (TC=25ćunless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
...
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