N-Channel MOSFET. FTP09N10N Datasheet

FTP09N10N MOSFET. Datasheet pdf. Equivalent


Part FTP09N10N
Description N-Channel MOSFET
Feature N-Channel MOSFET Applications: ● Adaptor ● Charger ● SMPS Features: ● RoHS Compliant ● Low ON Resis.
Manufacture IPS
Datasheet
Download FTP09N10N Datasheet


N-Channel MOSFET Applications: ● Adaptor ● Charger ● SMPS F FTP09N10N Datasheet
Recommendation Recommendation Datasheet FTP09N10N Datasheet




FTP09N10N
N-Channel MOSFET
Applications:
Adaptor
Charger
SMPS
Features:
RoHS Compliant
Low ON Resistance
Low Gate Charge
Peak Current vs Pulse Width Curve
Inductive Switching Curves
Ordering Information
PART NUMBER PACKAGE
FTP09N10N
TO-220
BRAND
IPS
FTP09N10N
VDSS
100V
Lead Free Package and Finish
RDS(ON)(Typ.)
7.3mΩ
ID
120A
Absolute Maximum Ratings
TC=25unless otherwise specified
Symbol
Parameter
FTP09N10N
VDSS
Drain-to-Source Voltage
100
ID Continuous Drain Current
IDM Pulsed Drain Current (NOTE *1)
VGS Gate-to-Source Voltage
120
480
±20
EAS Single Pulse Avalanche Energy
605
PD Power Dissipation
Derating Factor above 25°C
198
1.59
TL Maximum Temperature for Soldering
300
Operating Junction and Storage
TJ and TSTG Temperature Range
150-55 to150
Units
V
A
A
V
mJ
W
W/
Thermal Resistance
Symbol
Parameter
RθJC Junction-to-Case
RθJA Junction-to-Ambient
Max.
0.63
62.5
Units
W
Test Conditions
Water cooled heatsink, PD adjusted for a
peak junction temperature of +150.
1 cubic foot chamber, free air.
©2017 InPower Semiconductor Co., Ltd.
Page 1 of 5
FTP09N10N Preliminary. Jul. 2017



FTP09N10N
FTP09N10N
OFF Characteristics TC=25unless otherwise specified
Symbol
Parameter
Min. Typ. Max.
BVDSS
Drain-to-Source Breakdown Voltage 100 --
--
-- --
1
IDSS Drain-to-Source Leakage Current
-- -- 100
Gate-to-Source Forward Leakage
-- -- +100
IGSS
Gate-to-Source Reverse Leakage
-- -- -100
Units
V
μA
nA
Test Conditions
VGS=0V, ID=250μA
VDS=100V, VGS=0V
TJ=25
VDS=80V, VGS=0V
TJ=100
VGS=+20V
VGS= -20V
ON Characteristics TJ=25unless otherwise specified
Symbol
Parameter
Min. Typ.
RDS(ON)
StaticDrain-to-Source On-Resistance -- 7.3
VGS(TH)
Gate Threshold Voltage
Pulse width 300μs; duty cycle2%
2 --
Max.
9.5
4
Units
mΩ
V
Test Conditions
VGS=10V, ID=60A
VDS=VGS,ID=250μA
Notes:
*1. Repetitive rating; pulse width limited by maximum junction temperature.
*2L=0.5mH, ID=49A, Start TJ=25
©2017 InPower Semiconductor Co., Ltd.
Page 2 of 5
FTP09N10N Preliminary. Jul. 2017







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