N-Channel MOSFET. FTP12N10NA Datasheet

FTP12N10NA MOSFET. Datasheet pdf. Equivalent


Part FTP12N10NA
Description N-Channel MOSFET
Feature N-Channel MOSFET Applications: ● Adaptor ● Charger ● SMPS Features: ● RoHS Compliant ● Low ON Resis.
Manufacture IPS
Datasheet
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N-Channel MOSFET Applications: ● Adaptor ● Charger ● SMPS F FTP12N10NA Datasheet
Recommendation Recommendation Datasheet FTP12N10NA Datasheet




FTP12N10NA
N-Channel MOSFET
Applications:
Adaptor
Charger
SMPS
Features:
RoHS Compliant
Low ON Resistance
Low Gate Charge
Peak Current vs Pulse Width Curve
Inductive Switching Curves
Ordering Information
PART NUMBER PACKAGE
FTP12N10NA TO-220
BRAND
IPS
FTP12N10NA
VDSS
100V
Lead Free Package and Finish
RDS(ON)(Typ.)
8.7mΩ
IDSilicon
limited current
88A
Absolute Maximum Ratings
TC=25unless otherwise specified
Symbol
Parameter
FTP12N10NA
VDSS
Drain-to-Source Voltage
100
ID Continuous Drain Current
Continuous Drain Current TC =100
IDM Pulsed Drain Current (NOTE *1)
VGS Gate-to-Source Voltage
88
55
352
±20
EAS Single Pulse Avalanche Energy(NOTE *2)
560
TL Maximum Temperature for Soldering
300
Operating Junction and Storage
TJ and TSTG Temperature Range
150-55 to150
Units
V
A
A
A
V
mJ
©2017 InPower Semiconductor Co., Ltd.
Page 1 of 6
FTP12N10NA Preliminary. Nov. 2017



FTP12N10NA
FTP12N10NA
OFF Characteristics TC=25unless otherwise specified
Symbol
Parameter
Min. Typ. Max.
BVDSS
Drain-to-Source Breakdown Voltage 100 --
--
-- --
1
IDSS Drain-to-Source Leakage Current
-- -- 500
Gate-to-Source Forward Leakage
-- -- +100
IGSS
Gate-to-Source Reverse Leakage
-- -- -100
Units
V
μA
nA
Test Conditions
VGS=0V, ID=250μA
VDS=100V, VGS=0V
Ta=25
VDS=80V, VGS=0V
Ta=125
VGS=+20V
VGS= -20V
ON Characteristics TJ=25unless otherwise specified
Symbol
Parameter
Min. Typ.
RDS(ON)
StaticDrain-to-Source On-Resistance -- 8.7
VGS(TH)
Gate Threshold Voltage
Pulse width 300μs; duty cycle2%
23
Max.
11
4
Units
mΩ
Test Conditions
VGS=10V, ID=40A
V VDS=VGS,ID=250μA
Dynamic Characteristics Essentially independent of operating temperature
Symbol
Parameter
Min. Typ. Max. Units Test Conditions
Rg Gate Resistance
-- 1.2
--
Ω f=1MHz, VGS=0V,
VDS=0V
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
-- 3302
-- 372
-- 258
--
--
--
pF VGS= 0V,VDS = 25V
f =1.0MHz
Qg
Qgs
Qgd
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (Miller) Charge
-- 72.8
-- 13
-- 30
--
--
--
nC ID=35A,VDD=80V
VGS = 10V
Resistive Switching Characteristics
Symbol
Parameter
td(ON)
Turn-on Delay Time
trise Rise Time
td(OFF)
Turn-Off Delay Time
tfall Fall Time
Essentially independent of operating temperature
Min. Typ. Max. Units Test Conditions
-- 23.3 --
-- 19.1
-- 62.4
--
--
ns
VDD=50V, ID=35A,
VG=10V RG=6
-- 23.2 --
©2017 InPower Semiconductor Co., Ltd.
Page 2 of 6
FTP12N10NA Preliminary. Nov. 2017







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