N-Channel MOSFET. FTD150N10N Datasheet

FTD150N10N MOSFET. Datasheet pdf. Equivalent


Part FTD150N10N
Description N-Channel MOSFET
Feature N-Channel MOSFET Applications: ● Adaptor ● Charger ● SMPS Features: ● RoHS Compliant ● Low ON Resis.
Manufacture IPS
Datasheet
Download FTD150N10N Datasheet


N-Channel MOSFET Applications: ● Adaptor ● Charger ● SMPS F FTD150N10N Datasheet
Recommendation Recommendation Datasheet FTD150N10N Datasheet




FTD150N10N
N-Channel MOSFET
Applications:
Adaptor
Charger
SMPS
Features:
RoHS Compliant
Low ON Resistance
Low Gate Charge
Peak Current vs Pulse Width Curve
Inductive Switching Curves
Ordering Information
PART NUMBER PACKAGE
FTD150N10N TO-252
BRAND
IPS
FTD150N10N
VDSS
100V
Lead Free Package and Finish
RDS(ON)(Typ.)
113mΩ
ID
14A
Absolute Maximum Ratings TC=25unless otherwise specified
Symbol
Parameter
FTD150N10N
VDSS
Drain-to-Source Voltage
100
ID Continuous Drain Current
Continuous Drain Current TC =100
14
8.2
IDM Pulsed Drain Current (NOTE *1)
56
Power Dissipation
PD Derating Factor above 25
VGS Gate-to-Source Voltage
43.1
0.34
±20
EAS Single Pulse Avalanche Energy(NOTE *2)
28.8
IAS Avalanche Current
7.6
TL Maximum Temperature for Soldering
300
Operating Junction and Storage
TJ and TSTG Temperature Range
150-55 to150
Units
V
A
A
A
W
W/
V
mJ
A
Thermal Resistance
Symbol
Parameter
RθJC
Junction-to-Case
RθJA Junction-to-Ambient
Max.
2.9
100
Units
W
Test Conditions
Water cooled heatsink, PD adjusted for a
peak junction temperature of +150.
1 cubic foot chamber, free air.
©2017 InPower Semiconductor Co., Ltd.
Page 1 of 8
FTD150N10N REV. A. June. 2017



FTD150N10N
FTD150N10N
OFF Characteristics TC=25unless otherwise specified
Symbol
Parameter
Min. Typ. Max.
BVDSS
Drain-to-Source Breakdown Voltage 100 --
--
-- --
1
IDSS Drain-to-Source Leakage Current
-- -- 100
Gate-to-Source Forward Leakage
-- -- +100
IGSS
Gate-to-Source Reverse Leakage
-- -- -100
Units
V
μA
nA
Test Conditions
VGS=0V, ID=250μA
VDS=100V, VGS=0V
TJ=25
VDS=80V, VGS=0V
TJ=125
VGS=+20V
VGS= -20V
ON Characteristics TJ=25unless otherwise specified
Symbol
Parameter
Min. Typ.
RDS(ON)
StaticDrain-to-Source On-Resistance
-- 113
-- 135
VGS(TH)
Gate Threshold Voltage
Pulse width 300μs; duty cycle2%
1.8 2.4
Max.
150
190
2.9
Units
mΩ
mΩ
V
Test Conditions
VGS=10V, ID=4A
VGS=4.5V, ID=3A
VDS=VGS,ID=250μA
Dynamic Characteristics Essentially independent of operating temperature
Symbol
Parameter
Min. Typ. Max. Units Test Conditions
Rg Gate resistance
-- 3.4
--
VGS= 0V,VDS =0V
f =1.0MHz
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
-- 557
-- 34.7
-- 18.7
--
--
--
pF VGS= 0V,VDS = 25V
f =1.0MHz
Qg(4.5V)
Total Gate Charge
-- 5.8
--
Qg(10V)
Qgs
Qgd
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (Miller) Charge
-- 11.5 -- nC ID=4A,VDD=50V
-- 2.2
--
-- 2.6
--
Resistive Switching Characteristics
Symbol
Parameter
td(ON)
Turn-on Delay Time
trise Rise Time
td(OFF)
Turn-Off Delay Time
tfall Fall Time
Essentially independent of operating temperature
Min. Typ. Max. Units Test Conditions
-- 8.5
--
-- 6.3
-- 29.2
--
--
ns
VDD=50V, ID=4A,
VGS=10V RG=3
-- 3.2
--
©2017 InPower Semiconductor Co., Ltd.
Page 2 of 8
FTD150N10N REV. A. June. 2017







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