N-Channel MOSFET. FTE25N10N Datasheet

FTE25N10N MOSFET. Datasheet pdf. Equivalent


Part FTE25N10N
Description N-Channel MOSFET
Feature N-Channel MOSFET Applications: ● Adaptor ● Charger ● SMPS ● Synchronous Rectifier Features: ● RoHS .
Manufacture IPS
Datasheet
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N-Channel MOSFET Applications: ● Adaptor ● Charger ● SMPS ● FTE25N10N Datasheet
Recommendation Recommendation Datasheet FTE25N10N Datasheet




FTE25N10N
N-Channel MOSFET
Applications:
Adaptor
Charger
SMPS
Synchronous Rectifier
Features:
RoHS Compliant
Low ON Resistance
Low Gate Charge
Peak Current vs Pulse Width Curve
Inductive Switching Curves
Ordering Information
PART NUMBER PACKAGE
FTE25N10N
SOP-8
BRAND
IPS
FTE25N10N
VDSS
100V
Lead Free Package and Finish
RDS(ON)(Typ.)
20mΩ
ID
6.3A
Absolute Maximum Ratings
TC=25unless otherwise specified
Symbol
Parameter
FTE25N10N
VDSS
ID
IDM
PD
Drain-to-Source Voltage
Continuous Drain Current
Pulsed Drain Current, VGS@10V (Note*1)
Power Dissipation
Derating Factor above 25
100
6.3
25
2
0.016
VGS Gate-to-Source Voltage
EAS Single Pulse Avalanche Energy (Note*2)
±20
210
EAR Avalanche Energy ,Repetitive
0.2
IAR
dv/dt
Avalanche Current
Peak Diode Recovery dv/dt(Note*3)
0.2
5
TL Maximum Temperature for Soldering
300
Operating Junction and Storage
TJ and TSTG Temperature Range
-55 to150
Units
V
A
A
W
W/
V
mJ
mJ
A
V/ns
Thermal Resistance
Symbol
Parameter
RθJA Junction-to-Ambient
Typ. Max. Units
Test Conditions
62.5 / W 1 cubic foot chamber, free air.
©2016 InPower Semiconductor Co., Ltd.
Page 1 of 8
FTE25N10N REV. B. Sep. 2016



FTE25N10N
FTE25N10N
OFF Characteristics TC=25unless otherwise specified
Symbol
Parameter
Min. Typ. Max.
BVDSS
Drain-to-Source Breakdown Voltage 100 --
--
-- --
1
IDSS Drain-to-Source Leakage Current
-- --
10
Gate-to-Source Forward Leakage
-- -- +100
IGSS
Gate-to-Source Reverse Leakage
-- -- -100
Units
V
μA
nA
Test Conditions
VGS=0V, ID=250μA
VDS=100V, VGS=0V
TJ=25
VDS=80V, VGS=0V
TJ=125
VGS=+20V
VGS= -20V
ON Characteristics TJ=25unless otherwise specified
Symbol
Parameter
Min. Typ.
RDS(ON)
VGS(TH)
-- 20
Static Drain-to-Source On-Resistance
-- 22
Gate Threshold Voltage
1 --
Max.
25
25
3
Units
Test Conditions
VGS=10V, ID=5A
mΩ VGS=4.5V, ID=5A
V VDS=VGS,ID=250uA
Dynamic Characteristics Essentially independent of operating temperature
Symbol
Parameter
Min. Typ. Max. Units Test Conditions
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
-- 4700
-- 217
-- 162
--
--
--
pF VGS= 0V,VDS = 25V
f =1.0MHz
Qg
Qgs
Qgd
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (“Miller”) Charge
-- 92.3 --
-- 12.8 -- nC ID=6A,VDD=80V
-- 21
--
VGS = 10V
Resistive Switching Characteristics
Symbol
Parameter
td(ON)
trise
td(OFF)
tfall
Turn-on Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Essentially independent of operating temperature
Min. Typ. Max. Units Test Conditions
-- 25
-- 22
-- 183
ns VDD=50V, ID=5A,
VG=10V RG=10Ω
-- 62
©2016 InPower Semiconductor Co., Ltd.
Page 2 of 8
FTE25N10N REV. B. Sep. 2016







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