N-Channel MOSFET. FTB07N08N Datasheet

FTB07N08N MOSFET. Datasheet pdf. Equivalent


Part FTB07N08N
Description N-Channel MOSFET
Feature N-Channel MOSFET Applications: ● Adaptor ● Charger ● SMPS Features: ● RoHS Compliant ● Low ON Resis.
Manufacture IPS
Datasheet
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N-Channel MOSFET Applications: ● Adaptor ● Charger ● SMPS F FTB07N08N Datasheet
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FTB07N08N
N-Channel MOSFET
Applications:
Adaptor
Charger
SMPS
Features:
RoHS Compliant
Low ON Resistance
Low Gate Charge
Peak Current vs Pulse Width Curve
Inductive Switching Curves
Ordering Information
PART NUMBER PACKAGE
FTB07N08N
TO-263
BRAND
IPS
FTB07N08N
Lead Free Package and Finish
VDSS
85V
RDS(ON)(Typ.)
6mΩ
ID
120A
Absolute Maximum Ratings TC=25unless otherwise specified
Symbol
Parameter
FTP07N08N
VDSS
Drain-to-Source Voltage
85
ID Continuous Drain Current
Continuous Drain Current TC =100
120
85
IDM Pulsed Drain Current (NOTE *1)
480
Power Dissipation
PD Derating Factor above 25
VGS Gate-to-Source Voltage
208
1.8
±20
EAS Single Pulse Avalanche Energy(NOTE *2)
650.25
TL Maximum Temperature for Soldering
300
Operating Junction and Storage
TJ and TSTG Temperature Range
150-55 to150
Units
V
A
A
A
W
W/
V
mJ
Thermal Resistance
Symbol
Parameter
RθJC
Junction-to-Case
RθJA Junction-to-Ambient
Max.
0.55
65.2
Units
/W
Test Conditions
Water cooled heatsink, PD adjusted for a
peak junction temperature of +150.
1 cubic foot chamber, free air.
©2016 InPower Semiconductor Co., Ltd.
Page 1 of 9
FTB07N08N REV. A. Dec. 2016



FTB07N08N
FTB07N08N
OFF Characteristics TC=25unless otherwise specified
Symbol
Parameter
Min. Typ. Max.
BVDSS
Drain-to-Source Breakdown Voltage 85 --
--
-- --
1
IDSS Drain-to-Source Leakage Current
-- -- 100
Gate-to-Source Forward Leakage
-- -- +100
IGSS
Gate-to-Source Reverse Leakage
-- -- -100
Units
V
μA
nA
Test Conditions
VGS=0V, ID=250μA
VDS=85V, VGS=0V
TJ=25
VDS=68V, VGS=0V
TJ=100
VGS=+20V
VGS= -20V
ON Characteristics TJ=25unless otherwise specified
Symbol
Parameter
Min. Typ.
RDS(ON)
StaticDrain-to-Source On-Resistance -- 6.0
VGS(TH)
Gate Threshold Voltage
Pulse width 300μs; duty cycle2%
2 --
Max.
7.5
4
Units
mΩ
Test Conditions
VGS=10V, ID=60A
V VDS=VGS,ID=250μA
Dynamic Characteristics Essentially independent of operating temperature
Symbol
Parameter
Min. Typ. Max. Units Test Conditions
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Qg Total Gate Charge
Qgs Gate-to-Source Charge
Qgd Gate-to-Drain (Miller) Charge
-- 4572
-- 494.4
-- 253
-- 74.4
-- 21.9
-- 22.4
--
--
--
--
--
--
pF VGS= 0V,VDS = 25V
f =1.0MHz
nC ID=60A,VDD=64V
VGS = 10V
Resistive Switching Characteristics
Symbol
Parameter
td(ON)
Turn-on Delay Time
trise Rise Time
td(OFF)
Turn-Off Delay Time
tfall Fall Time
Essentially independent of operating temperature
Min. Typ. Max. Units Test Conditions
-- 35.7
--
-- 65.6
-- 67.2
--
--
ns
VDD=40V, ID=60A,
VGS=10V RG=6
-- 21.87 --
©2016 InPower Semiconductor Co., Ltd.
Page 2 of 9
FTB07N08N REV. A. Dec. 2016







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