N-Channel MOSFET. FTB11N08A Datasheet

FTB11N08A MOSFET. Datasheet pdf. Equivalent


Part FTB11N08A
Description N-Channel MOSFET
Feature FTB11N08A N-Channel MOSFET Applications: • Automotive • DC Motor Control • Class D Amplifier Featur.
Manufacture IPS
Datasheet
Download FTB11N08A Datasheet


FTB11N08A N-Channel MOSFET Applications: • Automotive • DC FTB11N08A Datasheet
Recommendation Recommendation Datasheet FTB11N08A Datasheet




FTB11N08A
FTB11N08A
N-Channel MOSFET
Applications:
• Automotive
• DC Motor Control
• Class D Amplifier
Features:
• RoHS Compliant
• Low ON Resistance
• Low Gate Charge
• Peak Current vs Pulse Width Curve
• Inductive Switching Curves
Ordering Information
PART NUMBER
FTB11N08A
PACKAGE
TO-263
BRAND
IPS
Pb Lead Free Package and Finish
VDSS
75V
RDS(ON) (Max.)
11 m:
ID
100A
D
G
S
TO-263
Not to Scale
G
D
S
Absolute Maximum Ratings TC=25 oC unless otherwise specified
Symbol
Parameter
VDSS
ID
ID@ 100 oC
IDM
PD
Drain-to-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current, VGS@ 10V
Power Dissipation
Derating Factor above 25 oC
(NOTE *1)
(NOTE *2)
VGS
EAS
IAS
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Engergy
L=10 mH, ID=11 Amps
Pulsed Avalanche Rating
Peak Diode Recovery dv/dt
(NOTE *3)
TL
TPKG
TJ and TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10 seconds
Package Body for 10 seconds
Operating Junction and Storage
Temperature Range
FTB11N08A
75
100*
Figure 3
Figure 6
230
1.54
± 20
600
Figure 8
5.0
300
260
-55 to 175
Units
V
A
W
W/ oC
V
mJ
V/ ns
oC
*Drain Current limited by Maximum Package Current Rating, 75 Amps
Caution: Stresses greater than those listed in the “Absolute Maximum Ratings” Table may cause permanent damage to the device.
Thermal Resistance
Symbol
Parameter
RTJC
RTJA
Junction-to-Case
Junction-to-Ambient
©2013 InPower Semiconductor Co., Ltd.
Min. Typ. Max.
-- -- 0.65
-- -- 62
Page 1 of 9
Units
oC/W
Test Conditions
Water cooled heatsink, PD adjusted for
a peak junction temperature of +175 oC.
1 cubic foot chamber, free air.
FTB11N08A REV. A Sep. 2013



FTB11N08A
OFF Characteristics TJ=25 oC unless otherwise specified
Symbol
Parameter
Min. Typ.
BVDSS
Drain-to-Source Breakdown Voltage
BreakdownVoltage Temperature
'BVDSS/' TJ Coefficient, Figure 11.
75 --
-- 0.08
Max.
--
--
-- -- 25
IDSS Drain-to-Source Leakage Current
-- -- 250
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
-- -- 100
-- -- -100
Units
V
V/ oC
μA
nA
Test Conditions
VGS=0V, ID=250μA
Reference to 25 oC,
ID=250 μA
VDS=75V, VGS=0V
VDS=60V, VGS=0V
TJ=150 oC
VGS=+20 V
VGS= -20V
ON Characteristics TJ=25 oC unless otherwise specified
Symbol
Parameter
Min. Typ.
RDS(ON)
VGS(TH)
Static Drain-to-Source On-Resistance
Figure 9 and 10.
Gate Threshold Voltage, Figure 12.
--
2.0
9.5
--
gfs Forward Transconductance
-- 83
Max.
11.0
4.0
--
Units
m:
V
S
Test Conditions
VGS=10V, ID=45A
(NOTE *4)
VDS=VGS, ID=250PA
VDS=15V, ID=75A
(NOTE *4)
Dynamic Characteristics Essentially independent of operating temperature
Symbol
Parameter
Min. Typ. Max. Units
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
-- 4541 --
-- 717 --
-- 40 --
pF
Qg Total Gate Charge
Qgs Gate-to-Source Charge
-- 69 --
-- 16 --
nC
Qgd Gate-to-Drain (“Miller”) Charge
-- 24 --
Test Conditions
VGS=0 V
VDS=25 V
f =1.0MHz
Figure 14
VDD=37V
ID=75A
VGS=10 V
Figure 15
Resistive Switching Characteristics
Symbol
Parameter
td(ON)
trise
td(OFF)
tfall
Turn-on Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Essentially independent of operating temperature
Min. Typ. Max. Units
Test Conditions
-- 17 --
-- 57 --
-- 57 --
-- 34 --
ns
VDD=30 V
ID=75A
VGS=10 V
RG=4.7 :
©2013 InPower Semiconductor Co., Ltd.
Page 2 of 9
FTB11N08A REV. A Sep. 2012







@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)