N-Channel MOSFET. FTP04N06NB Datasheet

FTP04N06NB MOSFET. Datasheet pdf. Equivalent


Part FTP04N06NB
Description N-Channel MOSFET
Feature N-Channel MOSFET Applications: ● Adaptor ● Charger ● SMPS Features: ● RoHS Compliant ● Low ON Resis.
Manufacture IPS
Datasheet
Download FTP04N06NB Datasheet


N-Channel MOSFET Applications: ● Adaptor ● Charger ● SMPS F FTP04N06NB Datasheet
Recommendation Recommendation Datasheet FTP04N06NB Datasheet




FTP04N06NB
N-Channel MOSFET
Applications:
Adaptor
Charger
SMPS
Features:
RoHS Compliant
Low ON Resistance
Low Gate Charge
Peak Current vs Pulse Width Curve
Inductive Switching Curves
Ordering Information
PART NUMBER PACKAGE
FTP04N06NB TO-220
BRAND
IPS
FTP04N06NB
VDSS
60V
Lead Free Package and Finish
RDS(ON)(Typ.)
3.2mΩ
ID
180A
Absolute Maximum Ratings
TC=25unless otherwise specified
Symbol
Parameter
FTP04N06NB
VDSS
Drain-to-Source Voltage
60
ID Continuous Drain Current
Continuous Drain Current TC =100
IDM Pulsed Drain Current (NOTE *1)
180
116
720
Power Dissipation
PD Derating Factor above 25
245
1.96
VGS Gate-to-Source Voltage
±20
EAS Single Pulse Avalanche Energy(NOTE *2)
870
TL Maximum Temperature for Soldering
300
Operating Junction and Storage
TJ and TSTG Temperature Range
150-55 to150
Units
V
A
A
A
W
W/
V
mJ
Thermal Resistance
Symbol
Parameter
RθJC
Junction-to-Case
RθJA Junction-to-Ambient
Max.
0.51
62.5
Units
∕W
Test Conditions
Water cooled heatsink, PD adjusted for a
peak junction temperature of +150.
1 cubic foot chamber, free air.
©2017 InPower Semiconductor Co., Ltd.
Page 1 of 9
FTP04N06NB REV. A. Mar 2017



FTP04N06NB
FTP04N06NB
OFF Characteristics TC=25unless otherwise specified
Symbol
Parameter
Min. Typ. Max.
BVDSS
Drain-to-Source Breakdown Voltage 60 --
--
-- --
1
IDSS Drain-to-Source Leakage Current
-- -- 100
Gate-to-Source Forward Leakage
-- -- +100
IGSS
Gate-to-Source Reverse Leakage
-- -- -100
Units
V
μA
nA
Test Conditions
VGS=0V, ID=250μA
VDS=60V, VGS=0V
TJ=25
VDS=48V, VGS=0V
TJ=100
VGS=+20V
VGS= -20V
ON Characteristics TJ=25unless otherwise specified
Symbol
Parameter
Min. Typ.
RDS(ON)
StaticDrain-to-Source On-Resistance -- 3.2
VGS(TH)
Gate Threshold Voltage
Pulse width 300μs; duty cycle2%
2 --
Max.
4.0
4
Units
Test Conditions
VGS=10V, ID=90A
V VDS=VGS,ID=250μA
Dynamic Characteristics Essentially independent of operating temperature
Symbol
Parameter
Min. Typ. Max. Units Test Conditions
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
-- 4882
-- 635
-- 342
--
--
--
pF VGS= 0V,VDS = 25V
f =1.0MHz
Qg
Qgs
Qgd
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (“Miller”) Charge
-- 86.2
-- 23.6
-- 29.4
--
--
--
nC ID=90A,VDD=48V
VGS = 10V
Resistive Switching Characteristics
Symbol
Parameter
td(ON)
trise
td(OFF)
tfall
Turn-on Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Essentially independent of operating temperature
Min. Typ. Max. Units Test Conditions
-- 37.9 --
-- 22.7
-- 68.8
--
--
ns VDD=30V, ID=90A,
VG=10V RG=6Ω
-- 23.5 --
©2017 InPower Semiconductor Co., Ltd.
Page 2 of 9
FTP04N06NB REV. A. Mar 2017







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