N-Channel MOSFET. FTP05N06N Datasheet

FTP05N06N MOSFET. Datasheet pdf. Equivalent


Part FTP05N06N
Description N-Channel MOSFET
Feature N-Channel MOSFET Applications: ● Adaptor ● Charger ● SMPS Features: ● RoHS Compliant ● Low ON Resis.
Manufacture IPS
Datasheet
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N-Channel MOSFET Applications: ● Adaptor ● Charger ● SMPS F FTP05N06N Datasheet
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FTP05N06N
N-Channel MOSFET
Applications:
Adaptor
Charger
SMPS
Features:
RoHS Compliant
Low ON Resistance
Low Gate Charge
Peak Current vs Pulse Width Curve
Inductive Switching Curves
Ordering Information
PART NUMBER PACKAGE
FTP05N06N
TO-220
BRAND
IPS
FTP05N06N
VDSS
60V
Lead Free Package and Finish
RDS(ON)(Typ.)
3.1mΩ
IDSilicon
limited current
150A
Absolute Maximum Ratings
TC=25unless otherwise specified
Symbol
Parameter
FTP05N06N
VDSS
Drain-to-Source Voltage
60
ID Continuous Drain Current
Continuous Drain Current TC =100
IDM Pulsed Drain Current (NOTE *1)
VGS Gate-to-Source Voltage
150
95
600
±20
EAS Single Pulse Avalanche Energy(NOTE *2)
1213
TL Maximum Temperature for Soldering
300
Operating Junction and Storage
TJ and TSTG Temperature Range
150-55 to150
Units
V
A
A
A
V
mJ
©2017 InPower Semiconductor Co., Ltd.
Page 1 of 6
FTP05N06N Preliminary. Nov. 2017



FTP05N06N
FTP05N06N
OFF Characteristics TC=25unless otherwise specified
Symbol
Parameter
Min. Typ. Max.
BVDSS
Drain-to-Source Breakdown Voltage 60 --
--
-- --
1
IDSS Drain-to-Source Leakage Current
-- -- 500
Gate-to-Source Forward Leakage
-- -- +100
IGSS
Gate-to-Source Reverse Leakage
-- -- -100
Units
V
μA
nA
Test Conditions
VGS=0V, ID=250μA
VDS=60V, VGS=0V
Ta=25
VDS=48V, VGS=0V
Ta=125
VGS=+20V
VGS= -20V
ON Characteristics TJ=25unless otherwise specified
Symbol
Parameter
Min. Typ.
RDS(ON)
StaticDrain-to-Source On-Resistance -- 3.1
VGS(TH)
Gate Threshold Voltage
Pulse width 300μs; duty cycle2%
23
Max.
4.5
4
Units
mΩ
Test Conditions
VGS=10V, ID=40A
V VDS=VGS,ID=250μA
Dynamic Characteristics Essentially independent of operating temperature
Symbol
Parameter
Min. Typ. Max. Units Test Conditions
Rg Gate Resistance
-- 0.9 -- Ω f=1MHz, VGS=0V,
VDS=0V
Ciss Input Capacitance
Coss Output Capacitance
-- 4500 --
-- 796 --
pF VGS= 0V,VDS = 25V
f =1.0MHz
Crss
Reverse Transfer Capacitance
-- 617 --
Qg
Qgs
Qgd
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (Miller) Charge
-- 109.8
-- 18.3
-- 49.8
--
--
--
nC ID=25A,VDD=48V
VGS = 10V
Resistive Switching Characteristics
Symbol
Parameter
td(ON)
Turn-on Delay Time
trise Rise Time
td(OFF)
Turn-Off Delay Time
tfall Fall Time
Essentially independent of operating temperature
Min. Typ. Max. Units Test Conditions
-- 30.3 --
-- 33.5
-- 87.2
--
--
ns
VDD=40V, ID=25A,
VG=10V RG=6
-- 49
--
©2017 InPower Semiconductor Co., Ltd.
Page 2 of 6
FTP05N06N Preliminary. Nov. 2017







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