Document
FTL10N06NA
N-Channel MOSFET
Applications:
● Adaptor ● Charger ● SMPS
VDSS 60V
Lead Free Package and Finish
RDS(ON)(Typ.) 8mΩ
ID 70A
Features:
● RoHS Compliant ● Low ON Resistance ● Low Gate Charge ● Peak Current vs Pulse Width Curve ● Inductive Switching Curves
Ordering Information
PART NUMBER PACKAGE FTL10N06NA TO-262
BRAND
IPS
Absolute Maximum Ratings
TC=25℃ unless otherwise specified
Symbol
Parameter
FTL10N06NA
VDSS ID IDM
Drain-to-Source Voltage Continuous Drain Current Pulsed Drain Current, VGS@10V
(NOTE *2)
60 70 280
Power Dissipation PD Derating Factor above 25℃
96 0.77
VGS Gate-to-Source Voltage EAS Single Pulse Avalanche Energy
±20 320
TL Maximum Temperature for Soldering
300
Operating Junction and Storage TJ and TSTG Temperature Range (NOTE *1)
150,-55 to150
Units V A A W
W/℃ V mJ
℃
Thermal Resistance
Symbol
Parameter
RθJC RθJA
Junction-to-Case Junction-to-Ambient
Typ.
Max. 1.3 62.5
Units ℃∕W
Test Conditions.