N-Channel MOSFET. FTL10N06NA Datasheet

FTL10N06NA MOSFET. Datasheet pdf. Equivalent


Part FTL10N06NA
Description N-Channel MOSFET
Feature FTL10N06NA N-Channel MOSFET Applications: ● Adaptor ● Charger ● SMPS VDSS 60V Lead Free Package a.
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Datasheet
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FTL10N06NA N-Channel MOSFET Applications: ● Adaptor ● Charg FTL10N06NA Datasheet
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FTL10N06NA
FTL10N06NA
N-Channel MOSFET
Applications:
Adaptor
Charger
SMPS
VDSS
60V
Lead Free Package and Finish
RDS(ON)(Typ.)
8mΩ
ID
70A
Features:
RoHS Compliant
Low ON Resistance
Low Gate Charge
Peak Current vs Pulse Width Curve
Inductive Switching Curves
Ordering Information
PART NUMBER PACKAGE
FTL10N06NA TO-262
BRAND
IPS
Absolute Maximum Ratings
TC=25unless otherwise specified
Symbol
Parameter
FTL10N06NA
VDSS
ID
IDM
Drain-to-Source Voltage
Continuous Drain Current
Pulsed Drain Current, VGS@10V
(NOTE *2)
60
70
280
Power Dissipation
PD Derating Factor above 25
96
0.77
VGS Gate-to-Source Voltage
EAS Single Pulse Avalanche Energy
±20
320
TL Maximum Temperature for Soldering
300
Operating Junction and Storage
TJ and TSTG Temperature Range (NOTE *1)
150-55 to150
Units
V
A
A
W
W/
V
mJ
Thermal Resistance
Symbol
Parameter
RθJC
RθJA
Junction-to-Case
Junction-to-Ambient
Typ.
Max.
1.3
62.5
Units
∕W
Test Conditions
Water cooled heatsink, PD adjusted for a
peak junction temperature of +150.
1 cubic foot chamber, free air.
©2015 InPower Semiconductor Co., Ltd.
Page 1 of 8
FTL10N06NA REV. A. Sep. 2015



FTL10N06NA
FTL10N06NA
OFF Characteristics TC=25unless otherwise specified
Symbol
Parameter
Min. Typ. Max.
BVDSS
Drain-to-Source Breakdown Voltage 60 --
--
-- --
1
IDSS Drain-to-Source Leakage Current
-- -- 100
Gate-to-Source Forward Leakage
-- -- +100
IGSS
Gate-to-Source Reverse Leakage
-- -- -100
Units
V
μA
nA
Test Conditions
VGS=0V, ID=250μA
VDS=60V, VGS=0V
TJ=25
VDS=48V, VGS=0V
TJ=125
VGS=+20V
VGS= -20V
ON Characteristics TJ=25unless otherwise specified
Symbol
Parameter
Min. Typ.
RDS(ON)
StaticDrain-to-Source
On-Resistance(NOTE *3)
-- 8
-- 10
VGS(TH)
Gate Threshold Voltage
1 --
gfs Forward Transconductance(NOTE *3) -- 65
Max.
10
12
3
--
Units
V
S
Test Conditions
VGS=10V, ID=35A
VGS=4.5V, ID=35A
VDS=VGS,ID=250μA
VDS=15V, ID=70A
Dynamic Characteristics Essentially independent of operating temperature
Symbol
Parameter
Min. Typ. Max. Units Test Conditions
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Qg Total Gate Charge
Qgs Gate-to-Source Charge
Qgd Gate-to-Drain (“Miller”) Charge
-- 4050
-- 280
-- 180
-- 57
-- 16
-- 13
--
--
--
--
--
--
pF VGS= 0V,VDS = 25V
f =1.0MHz
nC ID=35A,VDD=30V
VGS = 10V
Resistive Switching Characteristics
Symbol
Parameter
td(ON)
trise
td(OFF)
Turn-on Delay Time
Rise Time
Turn-Off Delay Time
tfall Fall Time
Essentially independent of operating temperature
Min. Typ. Max. Units Test Conditions
-- 21
-- 27
-- 63
ns VDD=30V, ID=35A,
VG=10V RG=9.1Ω
-- 30
©2015 InPower Semiconductor Co., Ltd.
Page 2 of 8
FTL10N06NA REV. A. Sep. 2015







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