N-Channel MOSFET. FTP15N06N Datasheet

FTP15N06N MOSFET. Datasheet pdf. Equivalent


Part FTP15N06N
Description N-Channel MOSFET
Feature N-Channel MOSFET Applications: ● Adaptor ● Charger ● SMPS Features: ● RoHS Compliant ● Low ON Resis.
Manufacture IPS
Datasheet
Download FTP15N06N Datasheet


N-Channel MOSFET Applications: ● Adaptor ● Charger ● SMPS F FTP15N06N Datasheet
Recommendation Recommendation Datasheet FTP15N06N Datasheet




FTP15N06N
N-Channel MOSFET
Applications:
Adaptor
Charger
SMPS
Features:
RoHS Compliant
Low ON Resistance
Low Gate Charge
Peak Current vs Pulse Width Curve
Inductive Switching Curves
Ordering Information
PART NUMBER PACKAGE
FTP15N06N
TO-220
BRAND
IPS
FTP15N06N
VDSS
60V
Lead Free Package and Finish
RDS(ON)(Typ.)
10mΩ
IDSilicon
limited current
80A
Absolute Maximum Ratings
TC=25unless otherwise specified
Symbol
Parameter
FTP15N06N
VDSS
Drain-to-Source Voltage
60
ID Continuous Drain Current
Continuous Drain Current TC =100
IDM Pulsed Drain Current (NOTE *1)
VGS Gate-to-Source Voltage
80
50
320
±20
EAS Single Pulse Avalanche Energy(NOTE *2)
247
TL Maximum Temperature for Soldering
300
Operating Junction and Storage
TJ and TSTG Temperature Range
150-55 to150
Units
V
A
A
A
V
mJ
©2017 InPower Semiconductor Co., Ltd.
Page 1 of 6
FTP15N06N Preliminary. Dec. 2017



FTP15N06N
FTP15N06N
OFF Characteristics TC=25unless otherwise specified
Symbol
Parameter
Min. Typ. Max.
BVDSS
Drain-to-Source
Voltage
Breakdown 60 --
--
-- --
1
IDSS Drain-to-Source Leakage Current
-- -- 500
Gate-to-Source Forward Leakage
-- -- +100
IGSS
Gate-to-Source Reverse Leakage
-- -- -100
Units
V
μA
nA
Test Conditions
VGS=0V, ID=250μA
VDS=60V, VGS=0V
Ta=25
VDS=48V, VGS=0V
Ta=125
VGS=+20V
VGS= -20V
ON Characteristics TJ=25unless otherwise specified
Symbol
Parameter
Min. Typ.
RDS(ON)
StaticDrain-to-Source On-Resistance -- 10
VGS(TH)
Gate Threshold Voltage
Pulse width 300μs; duty cycle2%
23
Max.
13
4
Units
mΩ
V
Test Conditions
VGS=10V, ID=40A
VDS=VGS,ID=250μA
Dynamic Characteristics Essentially independent of operating temperature
Symbol
Parameter
Min. Typ. Max. Units Test Conditions
Rg Gate Resistance
-- 1.3 -- Ω f=1MHz, VGS=0V,
VDS=0V
Ciss Input Capacitance
Coss Output Capacitance
-- 2130 --
-- 215 --
pF VGS= 0V,VDS = 25V
f =1.0MHz
Crss
Reverse Transfer Capacitance
-- 160 --
Qg
Qgs
Qgd
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (Miller) Charge
-- 42.7 --
-- 9.6 -- nC ID=40A,VDD=48V
-- 16
--
VGS = 10V
Resistive Switching Characteristics
Symbol
Parameter
td(ON)
Turn-on Delay Time
trise Rise Time
td(OFF)
Turn-Off Delay Time
tfall Fall Time
Essentially independent of operating temperature
Min. Typ. Max. Units Test Conditions
-- 18.3 --
-- 7.9
-- 37.8
--
--
ns
VDD=30V, ID=40A,
VG=10V RG=6
-- 11.4 --
©2017 InPower Semiconductor Co., Ltd.
Page 2 of 6
FTP15N06N Preliminary. Dec. 2017







@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)