N-Channel MOSFET. FTU36N06N Datasheet

FTU36N06N MOSFET. Datasheet pdf. Equivalent


Part FTU36N06N
Description N-Channel MOSFET
Feature FTU36N06N N-Channel MOSFET Applications: •Automotive •DC Motor Control •DC-DC Converters and Off-Li.
Manufacture IPS
Datasheet
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FTU36N06N N-Channel MOSFET Applications: •Automotive •DC Mo FTU36N06N Datasheet
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FTU36N06N
FTU36N06N
N-Channel MOSFET
Applications:
•Automotive
•DC Motor Control
•DC-DC Converters and Off-Line UPS
Features:
• RoHS Compliant
• Low ON Resistance
• Low Gate Charge
• Peak Current vs Pulse Width Curve
Ordering Information
PART NUMBER
FTU36N06N
PACKAGE
TO-251
BRAND
FTU36N06N
Pb Lead Free Package and Finish
VDSS
60V
RDS(ON) (Max.)
36 m:
ID
25A
D
GDS
Package
Not to Scale
G
S
Absolute Maximum Ratings TC=25 oC unless otherwise specified
Symbol
Parameter
VDSS
ID
ID@ 100 oC
IDM
PD
Drain-to-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current, VGS@ 10V
Power Dissipation
Derating Factor above 25 oC
(NOTE *1)
(NOTE *2)
VGS
dv/dt
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
(NOTE *3)
TL
TPKG
TJ and TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10 seconds
Package Body for 10 seconds
Operating Junction and Storage
Temperature Range
Maximum
60
25
Fig-3
80
50
0.33
± 20
5.0
300
260
-55 to 175
Units
V
A
W
W/ oC
V
V/ ns
oC
Caution: Stresses greater than those listed in the “Absolute Maximum Ratings” Table may cause permanent damage to the device.
Thermal Resistance
Symbol
Parameter
RTJC
Junction-to-Case
RTJA
Junction-to-Ambient
Maximum
3.0
110
Units
oC/W
Test Conditions
Drain Lead soldered to water cooled
heatsink, PD adjusted for a peak junc-
tion temperature of +175 oC.
1 cubic foot chamber, free air.
©2009 InPower Semiconductor Co., Ltd.
Page 1 of 9
FTU36N06N RevA Dec. 2009



FTU36N06N
OFF Characteristics TJ=25 oC unless otherwise specified
Symbol
Parameter
Min. Typ. Max.
BVDSS
Drain-to-Source Breakdown Voltage
'BVDSS/' TJ
BreakdownVoltage Temperature
Coefficient, Figure 11.
60 --
-- 0.05
--
--
-- -- 1.0
IDSS Drain-to-Source Leakage Current
-- -- 25
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
-- -- 100
-- -- -100
Units
V
V/ oC
μA
nA
Test Conditions
VGS=0V, ID=250μA
Reference to 25 oC,
ID=250 μA
VDS=60V, VGS=0V
VDS=48V, VGS=0V
TJ=150 oC
VGS=+20 V
VGS= -20V
ON Characteristics TJ=25 oC unless otherwise specified
Symbol
Parameter
Min. Typ. Max.
RDS(ON)
Static Drain-to-Source On-Resistance
--
--
-- 36
-- 50
VGS(TH)
gfs
Gate Threshold Voltage, Figure 12.
Forward Transconductance
1.0 -- 3.0
-- 17 --
Units
m:
V
S
Dynamic Characteristics Essentially independent of operating temperature
Symbol
Ciss
Coss
Crss
Parameter
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
--
--
--
Typ.
1296
117
87
Max.
--
--
--
Units
pF
Qg Total Gate Charge
Qgs Gate-to-Source Charge
Qgd Gate-to-Drain (“Miller”) Charge
-- 13.0 --
-- 6.8 --
-- 4.0 --
nC
Test Conditions
VGS=10V, ID=18A
(NOTE *4)
VGS=4.5V, ID=12A
(NOTE *4)
VDS=VGS, ID=250uA
VDS=30V, ID=18A
(NOTE *4)
Test Conditions
VGS=0 V
VDS=25 V
f =1.0MHz
Figure 14
VDD=30V
ID=18A,VGS=4.5V
Figure 15
Resistive Switching Characteristics
Symbol
Parameter
td(ON)
trise
td(OFF)
tfall
Turn-on Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Essentially independent of operating temperature
Min. Typ. Max. Units
Test Conditions
-- 8.0 --
-- 19.0 --
-- 34.0 --
-- 7.0 --
ns
VDD=30V
ID=18A
VGS=10 V
RG=3.3 :
©2009 InPower Semiconductor Co., Ltd.
Page 2 of 9
FTU36N06N RevA Dec. 2009







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