N-Channel MOSFET. FTP02N04NA Datasheet

FTP02N04NA MOSFET. Datasheet pdf. Equivalent


Part FTP02N04NA
Description N-Channel MOSFET
Feature N-Channel MOSFET Applications: ● Adaptor ● Charger ● SMPS Features: ● RoHS Compliant ● Low ON Resis.
Manufacture IPS
Datasheet
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N-Channel MOSFET Applications: ● Adaptor ● Charger ● SMPS F FTP02N04NA Datasheet
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FTP02N04NA
N-Channel MOSFET
Applications:
Adaptor
Charger
SMPS
Features:
RoHS Compliant
Low ON Resistance
Low Gate Charge
Peak Current vs Pulse Width Curve
Inductive Switching Curves
Ordering Information
PART NUMBER PACKAGE
FTP02N04NA TO-220
BRAND
IPS
VDSS
40V
FTP02N04NA
Lead Free Package and Finish
RDS(ON)(Typ.)
1.8mΩ
ID(silicon
limited)
300A
IDPackage
limited
120A
Absolute Maximum Ratings
TC=25unless otherwise specified
Symbol
Parameter
FTP02N04NA
VDSS
Drain-to-Source Voltage
40
Continuous Drain Current
ID Continuous Drain Current TC = 100 °C
300
197
IDM Pulsed Drain Current (NOTE *1)
VGS Gate-to-Source Voltage
1200
±20
EAS Single Pulse Avalanche Energy(NOTE *2)
800
PD Power Dissipation
312.5
TL Maximum Temperature for Soldering
300
Operating Junction and Storage
TJ and TSTG Temperature Range
150-55 to150
Units
V
A
A
A
V
mJ
W
Thermal Resistance
Symbol
Parameter
RθJC
Junction-to-Case
RθJA Junction-to-Ambient
Max.
0.4
62.5
Units
W
Test Conditions
Water cooled heatsink, PD adjusted for a
peak junction temperature of +150.
1 cubic foot chamber, free air.
©2018 InPower Semiconductor Co., Ltd.
Page 1 of 6
FTP02N04NA Preliminary.Mar. 2018



FTP02N04NA
FTP02N04NA
OFF Characteristics TC=25unless otherwise specified
Symbol
Parameter
Min. Typ. Max.
BVDSS
Drain-to-Source Breakdown Voltage 40 --
--
-- --
1
IDSS Drain-to-Source Leakage Current
-- -- 100
Gate-to-Source Forward Leakage
-- -- +100
IGSS
Gate-to-Source Reverse Leakage
-- -- -100
Units
V
μA
nA
Test Conditions
VGS=0V, ID=250μA
VDS=40V, VGS=0V
TC=25
VDS=32V, VGS=0V
TC=125
VGS=+20V
VGS= -20V
ON Characteristics TC=25unless otherwise specified
Symbol
Parameter
Min. Typ.
RDS(ON)
StaticDrain-to-Source On-Resistance -- 1.8
VGS(TH)
Gate Threshold Voltage
Pulse width 300μs; duty cycle2%
1 --
Max.
2.3
3
Units
mΩ
V
Test Conditions
VGS=10V, ID=100A
VDS=VGS,ID=250μA
Dynamic Characteristics Essentially independent of operating temperature
Symbol
Parameter
Min. Typ. Max. Units Test Conditions
Rg Gate resistance
-- 1.7 -- Ω VGS=0V, VDS=0V,
f=1MHz
Ciss Input Capacitance
Coss Output Capacitance
-- 14360
-- 1177
--
--
pF VGS= 0V,VDS = 25V
f =1.0MHz
Crss
Reverse Transfer Capacitance
-- 950
--
Qg
Qgs
Qgd
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (Miller) Charge
-- 250 --
-- 57 -- nC ID=100A,VDD=20V
-- 60 --
VGS = 10V
©2018 InPower Semiconductor Co., Ltd.
Page 2 of 6
FTP02N04NA Preliminary.Mar. 2018







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