N-Channel MOSFET. FTP04N04ND Datasheet

FTP04N04ND MOSFET. Datasheet pdf. Equivalent


Part FTP04N04ND
Description N-Channel MOSFET
Feature N-Channel MOSFET Applications: ● Adaptor ● Charger ● SMPS Features: ● RoHS Compliant ● Low ON Resis.
Manufacture IPS
Datasheet
Download FTP04N04ND Datasheet


N-Channel MOSFET Applications: ● Adaptor ● Charger ● SMPS F FTP04N04ND Datasheet
Recommendation Recommendation Datasheet FTP04N04ND Datasheet




FTP04N04ND
N-Channel MOSFET
Applications:
Adaptor
Charger
SMPS
Features:
RoHS Compliant
Low ON Resistance
Low Gate Charge
Peak Current vs Pulse Width Curve
Inductive Switching Curves
Ordering Information
PART NUMBER PACKAGE
FTP04N04ND TO-220
BRAND
IPS
FTP04N04ND
VDSS
40V
Lead Free Package and Finish
RDS(ON)(Typ.)
2.5mΩ
IDSilicon
limited current
140A
Absolute Maximum Ratings
TC=25unless otherwise specified
Symbol
Parameter
FTP04N04ND
VDSS
Drain-to-Source Voltage
40
ID Continuous Drain Current
Continuous Drain Current TC =100
IDM Pulsed Drain Current (NOTE *1)
VGS Gate-to-Source Voltage
140
88
560
±20
EAS Single Pulse Avalanche Energy(NOTE *2)
656
TL Maximum Temperature for Soldering
300
Operating Junction and Storage
TJ and TSTG Temperature Range
150-55 to150
Units
V
A
A
A
V
mJ
©2018 InPower Semiconductor Co., Ltd.
Page 1 of 6
FTP04N04ND Preliminary. Feb. 2018



FTP04N04ND
FTP04N04ND
OFF Characteristics TC=25unless otherwise specified
Symbol
Parameter
Min. Typ. Max.
BVDSS
Drain-to-Source Breakdown Voltage 40 --
--
-- --
1
IDSS Drain-to-Source Leakage Current
-- -- 500
Gate-to-Source Forward Leakage
-- -- +100
IGSS
Gate-to-Source Reverse Leakage
-- -- -100
Units
V
μA
nA
Test Conditions
VGS=0V, ID=250μA
VDS=40V, VGS=0V
TC=25
VDS=32V, VGS=0V
TC=125
VGS=+20V
VGS= -20V
ON Characteristics TC=25unless otherwise specified
Symbol
Parameter
Min. Typ.
RDS(ON)
StaticDrain-to-Source On-Resistance -- 2.5
VGS(TH)
Gate Threshold Voltage
Pulse width 300μs; duty cycle2%
2 --
Max.
3.2
4
Units
mΩ
V
Test Conditions
VGS=10V, ID=30A
VDS=VGS,ID=250μA
Dynamic Characteristics Essentially independent of operating temperature
Symbol
Parameter
Min. Typ. Max. Units Test Conditions
Rg Gate Resistance
-- 0.9 -- Ω f=1MHz, VGS=0V,
VDS=0V
Ciss Input Capacitance
Coss Output Capacitance
-- 5913 --
-- 680 --
pF VGS= 0V,VDS = 20V
f =1.0MHz
Crss
Reverse Transfer Capacitance
-- 601 --
Qg
Qgs
Qgd
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (Miller) Charge
-- 119
--
-- 17
-- nC ID=70A,VDD=32V
-- 35
--
VGS = 10V
Resistive Switching Characteristics
Symbol
Parameter
td(ON)
trise
Turn-on Delay Time
Rise Time
td(OFF)
Turn-Off Delay Time
tfall Fall Time
Essentially independent of operating temperature
Min. Typ. Max. Units Test Conditions
-- 28
--
-- 20
-- 110
--
--
ns
VDD=20V, ID=70A,
VG=10V RG=6
-- 42
--
©2018 InPower Semiconductor Co., Ltd.
Page 2 of 6
FTP04N04ND Preliminary. Feb. 2018







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