N-Channel MOSFET. FTD03N03N Datasheet

FTD03N03N MOSFET. Datasheet pdf. Equivalent


Part FTD03N03N
Description N-Channel MOSFET
Feature FTD0 3N03N N-Channel MOSFET Applications: • Automotive/Telecom • DC Motor Control • Class D Amplifi.
Manufacture IPS
Datasheet
Download FTD03N03N Datasheet


FTD0 3N03N N-Channel MOSFET Applications: • Automotive/Tele FTD03N03N Datasheet
Recommendation Recommendation Datasheet FTD03N03N Datasheet




FTD03N03N
FTD0 3N03N
N-Channel MOSFET
Applications:
• Automotive/Telecom
• DC Motor Control
• Class D Amplifier
• Uninterruptible Power Supply (UPS)
Features:
• RoHS Compliant
• Low ON Resistance
• Low Gate Charge
• Peak Current vs Pulse Width Curve
Ordering Information
PART NUMBER
FTD03N03N
PACKAGE
TO-252
MARKING
FTD03N03N
Pb Lead Free Package and Finish
VDSS
30V
RDS(ON) (Typ.)
2.8m :
ID
150A
D
GDS
TO-252
Not to Scale
G
S
Absolute Maximum Ratings TC=25 oC unless otherwise specified
Symbol
Parameter
VDSS
ID
ID@ 100oC
IDM
PD
Drain-to-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current, VGS@ 10V
Power Dissipation
Derating Factor above 25 oC
(NOTE *1)
(NOTE *2)
VGS Gate-to-Source Voltage
EAS
Single Pulse Avalanche Engergy
L=1.0 mH
IAS
dv/dt
Pulsed Avalanche Rating
Peak Diode Recovery dv/dt
(NOTE *3)
TL
TPKG
TJ and TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10 seconds
Package Body for 10 seconds
Operating Junction and Storage
Temperature Range
F T D03N03N
30
150*
Figure 3
Figure 6
100
00..6473
± 20
1300
Figure 8
4.0
300
260
-55 to 175
Units
V
A
W
W/ oC
V
mJ
V/ ns
oC
*Drain Current limited by Maximum Package Current Rating 75 Amps.
Caution: Stresses greater than those listed in the “Absolute Maximum Ratings” Table may cause permanent damage to the device.
Thermal Resistance
Symbol
Parameter
RTJC
RTJA
Junction-to-Case
Junction-to-Ambient
©2013 InPower Semiconductor Co., Ltd.
Min. Typ. Max.
-- -- 1.5
-- -- 100
Page 1 of 9
Units
oC/W
Test Conditions
Water cooled heatsink, PD adjusted for
a peak junction temperature of +175oC.
1 cubic foot chamber, free air.
FTD03N03N REV. A. Feb. 2013



FTD03N03N
OFF Characteristics Tc=25 oC unless otherwise specified
Symbol
Parameter
Min. Typ.
BVDSS
Drain-to-Source Breakdown Voltage
BreakdownVoltage Temperature
'BVDSS/' TJ Coefficient, Figure 11.
30 --
-- 0.08
Max.
--
--
-- -- 1
IDSS Drain-to-Source Leakage Current
-- -- 100
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
-- -- 100
-- -- -100
Units
V
V/ oC
μA
nA
Test Conditions
VGS=0V, ID=250μA
Reference to 25 oC,
ID=250 μA
VDS=30V, VGS=0V
VDS=24V, VGS=0V
Tc=150 oC
VGS=+20 V
VGS= -20V
ON Characteristics TJ=25 oC unless otherwise specified
Symbol
Parameter
Min. Typ. Max.
RDS(ON)
Static Drain-to-Source On-Resistance
Figure 9 and 10.
--
--
2.8 3.5
5.0 6.5
Units
m:
m:
VGS(TH)
gfs
Gate Threshold Voltage, Figure 12.
Forward Transconductance
1.0 -- 3.0
-- 100 --
V
S
Dynamic Characteristics Essentially independent of operating temperature
Symbol
Ciss
Coss
Crss
Parameter
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
--
--
Typ.
10000
940
Max.
--
--
-- 800 --
Units
pF
Qg Total Gate Charge
-- 75 --
Qgs Gate-to-Source Charge
-- 22 --
nC
Qgd Gate-to-Drain (“Miller”) Charge
-- 28 --
Test Conditions
VGS=10V, ID=50A
(NOTE *4)
VGS=4.5V, ID=40A
(NOTE *4)
VDS=VGS, ID=250PA
VDS=10V, ID=15A
(NOTE *4)
Test Conditions
VGS=0 V
VDS=25 V
f =1.0MHz
Figure 14
VDD=15V
ID=16A
VGS=10 V
Figure 15
Resistive Switching Characteristics
Symbol
Parameter
td(ON)
trise
td(OFF)
tfall
Turn-on Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Essentially independent of operating temperature
Min. Typ. Max. Units
Test Conditions
-- 22 --
-- 20 --
-- 145 --
-- 74 --
ns
VDD=15 V
ID=1A
VGS=10 V
RG=6:
©2013 InPower Semiconductor Co., Ltd.
Page 2 of 9
FTD03N03N REV. A. Feb. 2013







@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)