N-Channel MOSFET. FTD05N03NA Datasheet

FTD05N03NA MOSFET. Datasheet pdf. Equivalent


Part FTD05N03NA
Description N-Channel MOSFET
Feature N-Channel MOSFET Applications: ● Adaptor ● Charger ● SMPS Features: ● RoHS Compliant ● Low ON Resis.
Manufacture IPS
Datasheet
Download FTD05N03NA Datasheet


N-Channel MOSFET Applications: ● Adaptor ● Charger ● SMPS F FTD05N03NA Datasheet
Recommendation Recommendation Datasheet FTD05N03NA Datasheet




FTD05N03NA
N-Channel MOSFET
Applications:
Adaptor
Charger
SMPS
Features:
RoHS Compliant
Low ON Resistance
Low Gate Charge
Peak Current vs Pulse Width Curve
Inductive Switching Curves
Ordering Information
PART NUMBER PACKAGE
FTD05N03NA TO-252
BRAND
IPS
FTD05N03NA
VDSS
30V
Lead Free Package and Finish
RDS(ON)(Typ.)
4mΩ
ID
100A
Absolute Maximum Ratings
TC=25unless otherwise specified
Symbol
Parameter
FTD05N03NA
VDSS
Drain-to-Source Voltage
30
ID Continuous Drain Current
Continuous Drain Current TC =100
IDM Pulsed Drain Current (NOTE *1)
100
75
400
Power Dissipation
PD Derating Factor above 25
90
0.71
VGS Gate-to-Source Voltage
±20
EAS Single Pulse Avalanche Energy(NOTE *2)
100
TL Maximum Temperature for Soldering
300
Operating Junction and Storage
TJ and TSTG Temperature Range
150-55 to150
Units
V
A
A
A
W
W/
V
mJ
Thermal Resistance
Symbol
Parameter
RθJC
Junction-to-Case
RθJA Junction-to-Ambient
Max.
1.39
100
Units
∕W
Test Conditions
Water cooled heatsink, PD adjusted for a
peak junction temperature of +150.
1 cubic foot chamber, free air.
©2017 InPower Semiconductor Co., Ltd.
Page 1 of 8
FTD05N03NA RevA. Jun. 2017



FTD05N03NA
FTD05N03NA
OFF Characteristics TC=25unless otherwise specified
Symbol
Parameter
Min. Typ. Max.
BVDSS
Drain-to-Source Breakdown Voltage 30 --
--
-- --
1
IDSS Drain-to-Source Leakage Current
-- -- 100
Gate-to-Source Forward Leakage
-- -- +100
IGSS
Gate-to-Source Reverse Leakage
-- -- -100
Units
V
μA
nA
Test Conditions
VGS=0V, ID=250μA
VDS=30V, VGS=0V
TJ=25
VDS=24V, VGS=0V
TJ=125
VGS=+20V
VGS= -20V
ON Characteristics TJ=25unless otherwise specified
Symbol
Parameter
Min. Typ.
RDS(ON)
-- 4
StaticDrain-to-Source On-Resistance
5
VGS(TH)
Gate Threshold Voltage
Pulse width 300μs; duty cycle2%
1 1.5
Max.
6
7.6
2
Units
V
Test Conditions
VGS=10V, ID=50A
VGS=4.5V, ID=40A
VDS=VGS,ID=250μA
Dynamic Characteristics Essentially independent of operating temperature
Symbol
Parameter
Min. Typ. Max. Units Test Conditions
Rg Gate resistance
1.95
Ω VGS= 0V,VDS = 25V
f =1.0MHz
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
-- 2546
-- 364
-- 287
--
--
--
pF VGS= 0V,VDS = 25V
f =1.0MHz
Qg(10V)
Qgs
Qgd
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (“Miller”) Charge
-- 52.8
-- 8.78
-- 12.6
--
--
--
nC ID=30A,VDD=15V
VGS = 10V
Resistive Switching Characteristics
Symbol
Parameter
td(ON)
trise
Turn-on Delay Time
Rise Time
td(OFF)
Turn-Off Delay Time
tfall Fall Time
Essentially independent of operating temperature
Min. Typ. Max. Units Test Conditions
-- 17
--
-- 43
-- 109
--
--
ns VDD=15V, ID=30A,
VG=10V RG=12Ω
-- 104 --
©2017 InPower Semiconductor Co., Ltd.
Page 2 of 8
FTD05N03NA RevA. Jun. 2017







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