N-Channel MOSFET. FTD06N03NA Datasheet

FTD06N03NA MOSFET. Datasheet pdf. Equivalent


Part FTD06N03NA
Description N-Channel MOSFET
Feature N-Channel MOSFET Applications: ● Adaptor ● Charger ● SMPS Features: ● RoHS Compliant ● Low ON Resis.
Manufacture IPS
Datasheet
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N-Channel MOSFET Applications: ● Adaptor ● Charger ● SMPS F FTD06N03NA Datasheet
Recommendation Recommendation Datasheet FTD06N03NA Datasheet




FTD06N03NA
N-Channel MOSFET
Applications:
Adaptor
Charger
SMPS
Features:
RoHS Compliant
Low ON Resistance
Low Gate Charge
Peak Current vs Pulse Width Curve
Inductive Switching Curves
Ordering Information
PART NUMBER PACKAGE
FTD06N03NA TO-252
BRAND
IPS
FTD06N03NA
VDSS
30V
Lead Free Package and Finish
RDS(ON)(Typ.)
3.6mΩ
IDSilicon
limited current
90A
IDPackage
limited
60A
Absolute Maximum Ratings
Tj=25unless otherwise specified
Symbol
Parameter
Rating
VDSS
ID
IDM
PD
VGS
Drain-to-Source Voltage
Continuous Drain Current TC =25
Continuous Drain Current TC =100
Pulsed Drain Current TC =25(NOTE *1)
Power Dissipation TC =25
Derating Factor above 25
Gate-to-Source Voltage
30
90
60
360
53
0.424
±20
EAS Single Pulse Avalanche Energy(NOTE *2)
240
TL Maximum Temperature for Soldering
300
Operating Junction and Storage
TJ and TSTG Temperature Range
150-55 to150
Units
V
A
A
A
W
W/
V
mJ
Thermal Resistance
Symbol
Parameter
RθJC
Junction-to-Case
RθJA Junction-to-Ambient
Max.
2.36
100
Units
W
Test Conditions
Water cooled heatsink, PD adjusted for a
peak junction temperature of +150.
1 cubic foot chamber, free air.
©2018 InPower Semiconductor Co., Ltd.
Page 1 of 9
FTD06N03NA Preliminary. Mar. 2018



FTD06N03NA
FTD06N03NA
OFF Characteristics Tj=25unless otherwise specified
Symbol
Parameter
Min. Typ. Max.
BVDSS
Drain-to-Source Breakdown Voltage 30 --
--
-- --
1
IDSS Drain-to-Source Leakage Current
-- -- 100
Gate-to-Source Forward Leakage
-- -- +100
IGSS
Gate-to-Source Reverse Leakage
-- -- -100
Units
V
μA
nA
Test Conditions
VGS=0V, ID=250μA
VDS=30V, VGS=0V
TJ=25
VDS=24V, VGS=0V
TJ=125
VGS=+20V
VGS= -20V
ON Characteristics TJ=25unless otherwise specified
Symbol
Parameter
Min. Typ.
RDS(ON)
StaticDrain-to-Source On-Resistance
-- 3.6
-- 5.0
VGS(TH)
Gate Threshold Voltage
Pulse width 300μs; duty cycle2%
1 1.5
Max.
5.5
7.5
2
Units
mΩ
mΩ
V
Test Conditions
VGS=10V, ID=19A
VGS=4.5V, ID=19A
VDS=VGS,ID=250μA
Dynamic Characteristics Essentially independent of operating temperature
Symbol
Parameter
Min. Typ. Max. Units Test Conditions
Rg Gate resistance
-- 2.2
--
Ω VGS=0V, VDS=0V,
f=1MHz
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
-- 2848
-- 356
-- 316
--
--
--
pF VGS= 0V,VDS = 15V
f =1.0MHz
Qg
Qgs
Qgd
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (Miller) Charge
-- 53.5
-- 8.2
-- 12
--
--
--
nC ID=45A,VDD=15V
VGS = 10V
Resistive Switching Characteristics
Symbol
Parameter
td(ON)
Turn-on Delay Time
trise Rise Time
td(OFF)
Turn-Off Delay Time
tfall Fall Time
Essentially independent of operating temperature
Min. Typ. Max. Units Test Conditions
-- 13
--
-- 8
-- 56.5
--
--
ns
VDD=15V, ID=45A,
VG=10V RG=3
-- 12
--
©2018 InPower Semiconductor Co., Ltd.
Page 2 of 9
FTD06N03NA Preliminary. Mar. 2018







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