4A Triacs. T410-800T Datasheet

T410-800T Triacs. Datasheet pdf. Equivalent


Part T410-800T
Description 4A Triacs
Feature T4 series 4 A Triacs $ * $ $ Datasheet  production data . Table 1. Main characteristics S.
Manufacture STMicroelectronics
Datasheet
Download T410-800T Datasheet


T4 series 4 A Triacs $ * $ $ Datasheet  production T410-800T Datasheet
Recommendation Recommendation Datasheet T410-800T Datasheet




T410-800T
T4 series
4 A Triacs
$
*
$
$
Datasheet production data
.
Table 1. Main characteristics
Symbol
Value
Unit
IT(rms)
4
A
VDRM, VRRM
600 to 800
V
$
IGT 5 to 35 mA
$
$ *
72$%
$
$ *
$
,3$.
$ $
*
'3$.
Features
Three quadrants Triac
600 to 800 V VDRM/VRRM
Applications
General purpose AC inductive loads
Motor control circuits
Small home appliances
Description
Based on ST’s Snubberless / logic level
technology providing high commutation
performances, the T4 series is suitable for use on
AC inductive loads. They are recommended for
applications using universal motors, electro
valves, kitchen aid equipments, power tools, and
dishwashers.
Table 2. Device summary
Symbol(1)
Marking
T405-xxxB
T405-xxxB-TR
T405-xxxH
T405-xxxT
T410-xxxB
T410-xxxB-TR
T410-xxxH
T410-xxxT
T435-xxxB
T435-xxxB-TR
T435-xxxH
T435-xxxT
see Table 11
1. xxx = Voltage: 600 V, 700 V or 800 V (see Table 10).
November 2016
This is information on a product in full production.
DocID7699 Rev 9
1/15
www.st.com
15



T410-800T
Characteristics
1 Characteristics
T4 series
Table 3. Absolute maximum ratings (Tj = 25 °C unless otherwise stated)
Symbol
Parameter
Value Unit
On-state rms current
IT(rms) (full sine wave)
IPAK, DPAK,
TO-220AB
ITSM
I²t
Non repetitive surge peak on-state
current (full cycle, Tj initial = 25 °C)
I²t value for fusing
F = 50 Hz
F = 60 Hz
dI/dt
IGM
PG(AV)
Tstg
Tj
Critical rate of rise of on-state
current IG = 2 x IGT, tr 100 ns
Peak gate current
Average gate power dissipation
F = 120 Hz
tp = 20 µs
Storage junction temperature range
Operating junction temperature range
Tc = 110 °C
4
A
t = 20 ms
t = 16.7 ms
tp = 10 ms
Tj = 125 °C
30
A
31
5.1 A²s
50 A/µs
Tj = 125 °C
Tj = 125 °C
4
1
- 40 to +150
- 40 to +125
A
W
°C
Table 4. Electrical characteristics (Tj = 25 °C, unless otherwise stated)
Symbol
Test conditions
Quadrant
Value
T405 T410 T435
Unit
IGT(1) VD = 12 V, RL = 30
I - II - III
Max. 5 10 35 mA
VGT VD = 12 V, RL = 30
I - II - III
Max.
1.3
V
VGD
IH (2)
VD = VDRM, RL = 3.3 k , Tj = 125 °C I - II - III
IT = 100 mA
Min. 0.2
V
Max. 10 15 35 mA
IL IG = 1.2 IGT
I - III
II
Max. 10 25 50
mA
Max. 15 30 60
dV/dt (2) VD = 67% VDRM, gate open
Tj = 125 °C Min. 20 40 400 V/µs
(dV/dt)c = 0.1 V/µs
1.8 2.7
(dI/dt)c (2) (dV/dt)c = 10 V/µs
Tj = 125 °C Min. 0.9 2.0
A/ms
(without snubber)
2.5
1. Minimum IGT is guaranteed at 5% of IGT max.
2. For both polarities of A2 referenced to A1
2/15 DocID7699 Rev 9







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